实验三实验四.docx
- 文档编号:8631449
- 上传时间:2023-02-01
- 格式:DOCX
- 页数:16
- 大小:35.44KB
实验三实验四.docx
《实验三实验四.docx》由会员分享,可在线阅读,更多相关《实验三实验四.docx(16页珍藏版)》请在冰豆网上搜索。
实验三实验四
实验三:
外文(数据库)信息资源的检索(报告)
专业:
新能源科学与工程 班级:
能源111 学号:
1110604120 姓名:
李坤
一、实验目的:
1.了解外文信息资源的概况及图书馆数据库的购置状况;
2.掌握相关外文信息资源的检索技术与检索方法。
二、实验内容:
1.EI数据库的检索;
2.IEL数据库的检索;
3.Springer数据库的收录特点与使用方法;
4.ElsevierSD数据库的检索;
三、实验题目:
同实验一、实验二
题目为:
单片开关电源及PCB设计研究
四、实验内容:
1.利用《EI》检索你所选课题的检索2010年以来的相关的英文期刊论文的摘要两篇。
提示:
分析课题的主题词(要求尽可能地分析其中的两个以上主题词)→主题词翻译为英文名称;检索步骤:
→点击“电子资源”的“外文文献资源”→点“EI”进入“EngineeringVillage→选“QuickSearch”方式→建议选title为检索字段(途径)→输入有关检索词→阅读、下载摘要(注意:
原文的文种是否为“英文”、文献类型是否为“期刊论文”、时间为2010年以后)。
(1)检索字段为(英文表达):
Researchanddesign、monolithicswitchpowersupply、PCB
(2)选择的检索词(英文表达)1:
Researchanddesign;检索词2:
monolithicswitchpowersupply;3PCB
(3)检索结果:
①文献一:
论文名:
Designofamonolithicautomaticsubstrate/supplymultiplexerforDVS-Enabledadaptivepowerconverters著者名:
Zheng,ChenMa,Dongsheng
刊名:
IEEETransactionsonCircuitsandSystems年:
2011卷:
58期:
6刊载页码:
376-380
摘要(粘贴此处):
Itallowstheconverterstoseamlesslyregulatetheoutputvoltageatanydesiredlevelwithoutsufferinglargeleakagecurrentandlatch-up.Inaddition,anautomaticsupplyvoltagemultiplexingschemeispresentedtosignificantlyimprovepowerefficiencyandreducechiparea.TheproposedASSMcircuitwasfabricatedwithanIBM130-nmCMOSprocess.Experimentalresultsshowa4.44-mV/nsswitchingspeedwithaswitchingvoltagerangingfrom0.9to2.5V.Duetoanaccuratevoltagecomparison,thetrackingerrorinsteadystateiseffectivelyminimizedbelow5mV.Thecircuitonlyoccupiesa0.015-mm2siliconarea,withmaximumstaticpowerof227μ.©2006IEEE.
②文献二:
论文名:
A2.5-Vlow-reference-voltage2.8-Vlow-collector-voltageoperation0.8-0.9-GHzbroadbandCDMABiFETpoweramplifierwithaninputSPDTbandselectswitch著者名:
Yamamoto,Kazuya
刊名:
IEEETrans.MicrowaveTheoryTech年:
2011卷:
59期:
9刊载页码:
2306-2317
摘要(粘贴此处):
Thispaperdescribescircuitdesignandmeasurementresultsofabipolarfield-effecttransistormonolithicmicrowaveintegratedcircuitpoweramplifier(PA)moduleoperatingwitha2.5-Vlowreferencevoltage(Vref)anda2.8-Vlowcollectorsupplyvoltage(Vcc).Whilecovering824-925-MHzbroadbandCDMAoperationat2.8VofVcc,thePAallowsa1.1-VlowVccand18-dBmoutputpower(Pout)operation.Thisisrealizedusinganon-chipstepquiescentcurrentcontrolschemedependingonVcc.Inaddition,aninputhighelectron-mobilitytransistorsingle-poledouble-throwswitchisintegratedonthePAdieforselecting800/900-MHzoperatingbands,therebyprovidingeasyconnectivitybetweenatransmitsurfaceacousticwavefilterandthePA.Measurementresultsunderthe2.8/1.1-VVccand2.5-VVrefbiasconditionsshowthatthePAmeetsJ-CDMA/W-CDMApoweranddistortionspecificationssufficientlyoverawidetemperaturerangefrom-20°Cto85°Cwhilerealizingabroadbandoperationrangingfrom824to925MHz.ForJ-CDMA(IS-95B)modulation,thePAcandelivera28-dBmPout,a36%power-addedefficiency(PAE),anda-50-dBcadjacentchannelpowerratio,whilea29-dBmPout,a38%PAE,anda-40-dBcadjacentchannelleakagepowerratio(ACLR)areachievedforW-CDMA(3GPPR99)modulation.Under3:
1loadmismatchingcondition,thePAalsosuppressesACLRoflessthan-36dBcwhilekeepingaforwardpowerof27.5dBm.MoreoverthePAiscapableofdeliveringa18-dBmPoutandmorethan26%PAEunder824-925-MHzand1.1-VJ-CDMAmodulationtestconditions.Tothebestofauthors'knowledge,thisisthefirstreportonabroadbandproduction-levelCDMAPAoperatingwithlowVrefandlowVcc.©2011IEEE.
摘要译文(粘贴此处)本文介绍了一种双极晶体管单片微波集成电路功率放大器电路的设计和测量结果(PA)模块与2.5-V低参考电压(Vref)操作和2.8-V低集电极电源电压(VCC)。
而在2.8V的VCC覆盖824-925-mhz宽带CDMA操作,PA允许1.1-v低的VCC和18dBm的输出功率(Pout)操作。
这是使用一个片上的步骤的静态电流控制方案的实现取决于VCC。
此外,输入高电子迁移率晶体管单刀双掷开关集成在PA死亡800/900MHz频段的选择,从而发射声表面波滤波器的参数和测量结果的2.8/1.1-v2.5VVCC和VREF之间的偏置条件下提供方便的连接表明,PA和J-CDMA/W-CDMA功率失真规格足够在很宽的温度范围从20到85°°CC在实现宽带操作范围从824至925兆赫。
(多为J-CDMA)调制,PA能够提供28dBm的鳕鱼,36%的功率附加效率(PAE),和-50dBc的相邻信道功率比,而29dBm的鳕鱼,38%的PAE,和-40dBc的相邻信道泄漏功率比(ACLR)实现W-CDMA(3GPPR99)调制。
3:
1负载失配条件下,PA的抑制小于-36dBc的ACLR的同时保持27.5dBm正向功率。
此外,PA能够提供18dBm的嘴,超过26%的PAE824-925-mhz和1.1-vJ-CDMA调制试验条件下。
据作者所知,这是一个宽带CDMAPA生产水平低的低VCC操作的第一次报告。
©IEEE2011。
2.利用“IEL全文数据库”检索你所选课题的检索2010年以来的相关的英文期刊论文的摘要及全文一篇(将论文正文第一页下载)
提示:
利用“IEL”检索思路:
→点“电子期刊”→点“IEL”→“点击进入”→点击“Advancedsearch”→文献类型:
点击“JOURNAL”,在“SEARCH”输入检索词(用截词检索方法输入一英文检索词)→点击最下端的“SEARCH”显示检索结果→显示摘要→点击PDF显示全文→复制、下载原文。
(1)检索字段为(英文表达):
Researchanddesign、monolithicswitchpowersupply、PCB
(2)选择的检索词(英文表达)1:
Researchanddesign;检索词2:
monolithicswitchmonolithicswitchpowersupplysupply;3PCB
(3)检索结果:
①期刊论文:
∙论文名:
Monolithicintegrationoflateralfield-effectrectifierwithnormally-offHEMTforGaN-on-Siswitch-modepowersupplyconverters著者名:
WanjunChen
刊名:
IEEEInternational年:
2008卷:
1期:
1刊载页码:
1-4
摘要(粘贴此处):
Alateralfield-effectrectifier(L-FER)thatcanbefabricatedwithnormally-offtransistoronthesameAlGaN/GaNHEMTwiththesamefabricationprocesshasbeendemonstrated.TheL-FERexhibitslowturn-onvoltage,lowspecificon-resistanceandhighreversebreakdown.Aprototypeofswitch-modedc-dcboostconverterthatfeaturesmonolithicallyintegratedL-FERandnormally-offHEMTisdemonstratedforthefirsttimeusingindustry-standardGaNon-SiepitaxialwaferstoprovethefeasibilityofGaNpowerintegratedtechnology
论文第一页正文为(粘贴此处,按照一般格式要求编辑文档):
CROSS-REFERENCE
PriorityisclaimedfromtheU.S.ProvisionalPatentApplicationNo.61/064,899,filedonApr.2,2008,whichisherebyincorporatedbyreference.
BACKGROUND
ThepresentapplicationrelatestoIII-N-typepowerdevices,methods,andsystems,andmoreparticularlytoIII-N-typeintegratedpowerdeviceshavingheterostructuretransistorsandlateralfield-effectrectifiersonthesamechip,andtorelatedmanufacturingmethods,operatingmethods,andsystems.
Notethatthepointsdiscussedbelowmayreflectthehindsightgainedfromthedisclosedinventions,andarenotnecessarilyadmittedtobepriorart.
Powersemiconductordevicesincludetwocategories:
1)three-terminaltransistorsasswitchesand2)two-terminalrectifiers.Bothrectifiersandtransistorsareessentialcomponentsinhighvoltagepowerelectronicsapplications,forexample,switching-modepowersuppliesandmanyformsofdrivecircuits.
Fortransistors,AlGaN/GaNhighelectronmobilitytransistors(HEMTs)areoftenthebestchoice.GroupIII-nitride(“III-N”)compoundsemiconductors,suchasthoseincorporatingAlGaN/GaN,possesstheadvantagesofhavingwidebandgap,highbreakdownfield,andlargethermalconductivity,whichcanbringsignificantbenefitstothedesignofheterostructurefield-effecttransistorsandapplications.Thewide-bandgapAlGaN/GaNheterostructuresystem,enhancedbythespontaneousandpiezoelectricpolarizationeffects,yieldstwo-dimensionalelectrongas(2DEG)channelwithahighsheetchargeconcentrationandhighelectronmobility.HEMTtransistorstructureshencegeneraterecordoutputpowerdensitiesatmicrowavefrequencies.
AlGaN/GaNheterostructuresforpowerelectronicsapplicationcanoperateathighertemperatureandhigherswitchingfrequencythanotherdevicetypes.Foragivenbreakdownvoltage(BV)requirement,theGaNsemiconductorsmaypresentanon-resistance(Ron)thatisthreeordersofmagnitudelowerthanSisemiconductors.
Forrectifiers,two-terminalpowerrectifierswithlowforwardturn-onvoltage(VF,ON),lowspecificon-resistance(RON,sp)andhighreversebreakdownvoltage(BV)aredesirableinhigh-voltagepowerelectronics,e.g.inswitching-modepowersuppliesandpowerfactorcorrectioncircuits.Lowon-stateresistanceandshortreverserecoverytime,foragivenoff-statebreakdownvoltage,areimportantforpowerconversionefficiency.
Variouseffortshavebeenmadetoimprovepowerrectifierperformance.SomeproposedstructuresincludeJBS(junctionbarrierSchottky)diode,MPS(mergedp-i-nSchottky)diode,andsynchronousrectifier.AnotherisSchottkybarrierdiodes(SBDs,FIG.1)andp-i-ndiodesondopedbulkGaN,whichpresentshigh-breakdownlow-on-resistancefeatures.
However,sincetheepitaxialstructuresforSBDorp-i-ndiodesarenotcompatiblewiththeHEMTstructures,theSBDorp-i-ndioderectifiershavenotbeensuccessfullyintegratedwithHEMTs(atleastnotwithoutunacceptableperformanceloss).AlthoughSBDscanbedirectlyformedonAlGaN/GaNheterostructures,theseriescombinationoftheAlGaN/GaNheterojunctionwiththemetal-AlGaNSchottkybarrierresultsinhigherturn-onvoltagesandhigheron-resistances.
Arecentlydevelopeddual-metalSBDsystem(FIG.2)combinesalowSchottkybarriermetal(Al/Ti)andahighSchottkybarriermetal(Pt)toprovideananodewithalowturn-onvoltage.However,thistoopresentssomeincompatibilitywithAlGaN/GaNHEMTs,sincetheHEMTsconventionallyuseNi/Augatemetallization.Thusadditionalprocessingstepswillberequired.
3.对2008年以来淮阴工学院、盐城工学院、淮海工学院发表的中文期刊论文被《EI》收录的情况进行比较:
提示:
检索思路点“电子资源”栏目里的“外文文献资源”→点“《EI》数据库”→翻译三个学校的英文表达名称→用“(authoraffiliation:
学校英文名称)and(litmit:
journalarticle)and(languane:
Chinese)and(time:
2008to2013)检索式检索。
(1)淮阴工学院(英文名称:
HuaiyinInstituteofTechnology):
146篇
(2)盐城工学院(英文名称:
YanchengInstituteOfTechnology):
131篇
(3)淮海工学院(英文名称:
HuaihaiInstituteofTechology):
0篇
4.利用“Springer数据库”检索你所选课题的检索2005年以来的相关的英文期刊论文的摘要及全文一篇(将论文正文第一页下载)
提示:
检索思路(期刊论文为例)→点“电子资源”栏目里的“外文文献资源”→点“施普林格(Springer-Verlag)学术期刊及电子图书””→“点击进入”→请选择检索范围(文献类型:
期刊)→论文题名(用截词检索方法输入一英文检索词)→显示检索结果→点击某一篇论文→显示摘要(注意判断是否原文为英文,是否为2000以后收录的期刊论文)。
(1)检索字段为(英文表达):
Researchanddesign、monolithicswitchpowersupply、PCB
(2)选择的检索词(英文表达)1:
Researchanddesign;检索词2:
monolith
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- 实验
![提示](https://static.bdocx.com/images/bang_tan.gif)