CVD reactor with energy efficient thermal1.docx
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CVD reactor with energy efficient thermal1.docx
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CVDreactorwithenergyefficientthermal1
CVDreactorwithenergyefficientthermal-radiationshield
EP2330232A1
Publicationnumber
EP2330232A1
Publicationtype
Application
Applicationnumber
EP20100002031
Publicationdate
8Jun2011
Filingdate
26Feb2010
Prioritydate
2Dec2009
Alsopublishedas
US20110126761
WO2011068283A1
Inventors
JongRockKim
JongGyuLee
SangWooLee
LyleC.Winterton
Applicant
WoongjinpolysiliconCo.,Ltd.
InternationalClassification
C01B33/035
3More»
CooperativeClassification
C01B33/035
EuropeanClassification
C23C16/24
ABSTRACT
ASiemenstypeCVDreactordeviceisprovided.Oneormoreradiationshields(20)aredisposedbetweenarodfilament(34)andacooledwall(30)inthereactor.TheradiationshieldabsorbsradiantheatemanatingfromtheheatedpolysiliconrodduringtheCVDprocess,getsheatedabove400°C,re-radiatetheabsorbedheattowardbothofthepolysiliconrodandthecooledwall,soastoprovidethermalshieldingeffecttothecooledwall.Thenetenergylossofthepolysiliconrodisreducedasmuchastheamountofenergyemittedtowardthepolysiliconrodfromtheradiationshield,suchthatconsiderableamountofelectricalenergyoftheCVDreactorisreducedandsaved.Theenergyreductionrategoesupmuchhigherifusingmultiplelayeredradiationshields,lowshieldingemissivity,andlowthermalconductivitytogether.Thepurityofthemanufacturedpolysiliconcanbemaintainedbyusingthermalshieldingmaterialthatisstableinahightemperaturesuchasgraphite,siliconcarbide-coatedgraphite,andsilicon.
DRAWINGS(10)
CLAIMS
Achemicalvapordeposition(CVD)reactordevicecomprising:
areactioncontainercomprisingoneormorereactionchamberswithacooledwall;
apluralityofelectrodesextendingintothereactionchambers;
atleastonerodfilamenthavingtwoendsconnectedtotwodifferentelectrodesofthepluralityofelectrodesinthereactionchamberandbeingheatedtoahightemperaturewhenanelectricalcurrentpassesthroughthetwoelectrodes;
asilicon-containinggassourcethatisconnectedtoinsideofthereactionchamber,suppliessilicon-containinggasintothereactionchamber,andhaspolysilicondepositedonsurfacesoftherodfilamentheatedbyachemicalvapordeposition(CVD)processproducingpolysiliconrod;and
aradiationshielddisposedbetweentherodfilamentandthecooledwalland/orbetweentherodfilamentandthefloorofthereactionchamberandshieldingtheradiantheatenergyfromthepolysiliconrodfromtransferringtothecooledwalland/ortothefloorofthereactionchamber.
TheCVDreactorofClaim1,whereinthetemperatureoftheradiationshieldand/orthetemperatureofasurfacefacingtheheatedpolysiliconrodoftheradiationshieldismaintainedabove400°CduringaCVDreaction.
TheCVDreactorofClaim1,whereintheradiationshieldismadetohavethicknessandthermalconductivitysatisfyingaconditionofk/τvaluebelow3,000Watt/Kelvin,wherekisathermalconductivityoftheradiationshieldandτisathicknessoftheradiationshield.
TheCVDreactorofClaim1,whereinthesilicon-containinggasisasilanegassourceselectedfromthegroupconsistingofmonosilane,disilane,orchlorosilane,ormixturethereof.
TheCVDreactorofClaim1,whereintheradiationshieldismadeofanyoneorcombinationoftwoormoreselectedfromthegroupconsistingofsilicon,graphite,siliconcarbide(SiC),siliconcarbide-coatedmaterial,siliconnitrides(nitrifiedsilicons),siliconoxides,aluminumoxides,boronnitrides,molybdenumormolybdenum-basedalloys,tungstenortungsten-basedalloys,tantalumortantalum-basedalloys,silica-basedporousmaterials,aluminosilicate-basedporousmaterials,gold-coatedporousmaterials,gold-coatedmaterials,platinum-coatedporousmaterials,platinum-coatedmaterials,silica-coatedporousmaterials,silica-coatedmaterials,silver-coatedporousmaterials,silver-coatedmaterials,andperlite.
TheCVDreactorofClaim1,whereintheradiationshieldisinstalledsoastoenclosetherodfilamentandtocoveratleastapartofsurfaceofthecooledwallwithrespecttothecooledwall,andsoastocoveratleastapartofthefloorwithrespecttothefloorofthereactionchamber.
TheCVDreactorofClaim1,whereintheradiationshieldcomprisesapluralityofradiationshields,andwhereinthepluralityofradiationshieldsaredisposedwithstructuresof,viewingfromtherodfilamenttowardthecooledwall,a)beingdisposedwithtwoormorelayersoverlapped,b)beingdisposedwithsinglelayerswithintervalstherebetween,orc)beingdisposedwithmixedstructuresoftheoverlappedmultiplelayersandtheseparatedsinglelayers.
TheCVDreactorofClaim1,whereintheradiationshieldisformedbylaminatingapluralityofradiationshields,andwhereinthepluralityofradiationshieldsareoverlappedlooselysuchthatthereexistmultiplegapsbetweenlayers.
TheCVDreactorofClaim1,whereintheradiationshieldsaredisposedwithintervalssuchthataminimalminutegapisprovidedagainstthecooledwallsoastofunctionasathermalresistance.
TheCVDreactorofClaim1,whereintheradiationshieldstouchasurfaceofthecooledwalllooselysuchthatapluralityofgapsareprovidedagainstthecooledwall.
TheCVDreactorofClaim1,whereintheradiationshieldismadeofmaterialhavingathermalconductivitybelow35W/m-k.
TheCVDreactorofClaim3,whereintheradiationshieldisinstalledpressedcloselytothecooledwallsuchthatthereisnogapresistancetothethermalconductivityofthecooledwall.
TheCVDreactorofClaim1,whereintheradiationshieldreducesthethermalenergylossfromthepolysiliconrodbyatleastoneeffectoutofathermalshieldingeffectbyahotre-radiation(higherthanabout400°C),ashieldingeffectbymultiplelayersofradiationshields,ashieldingeffectbyalowspectralemissivityoftheradiationshieldmaterial,andaninsulatingeffectbyreductionofthermalconductivityduetothicknessthereof.
TheCVDreactorofClaim1,whereintheradiationshieldismadeofmaterialhavingasurfacespectralemissivityfromabout0.05toabout1.0.
Achemicalvapordeposition(CVD)reactordevicecomprising:
areactioncontainerformingareactionchamberwithabaseplateandcooledwallcoveringthebaseplate;
anelectricalpowersupplyextendingfromoutsideofthereactioncontainerintothereactionchamberthroughthebaseplate,beingprovidedwithapluralityofelectrodesatendportions;
atleastonerodfilamenthavingtwoendsconnectedtotwodifferentelectrodesofthepluralityofelectrodesoftheelectricalpowersupplyinthereactionchambersoastoformaclosedcircuitandbeingheatedtoahightemperaturewhenanelectricalcurrentpassesthereinthroughtheelectricalpowersupply;
asilicon-containinggassourcethatsuppliessilicon-containinggasintothereactionchamberthroughagasinputpipeandagasoutputpipeconnectedfromoutsidetoinsideofthereactionchamber,andhaspolysilicondepositedonsurfacesoftherodfilamentheatedbyachemicalvapordeposition(CVD)processproducingpolysiliconrod;and
aradiationshielddisposedbetweentherodfilamentandthecooledwalland/orbetweentherodfilamentandthefloorofthereactionchamber,coveringatleastapartofthecooledwalland/orafloorofthereactionchamber,andmaintainingatemperaturethereofaboveabout400°CbyabsorbingheatradiatingfromthepolysiliconrodduringtheCVDreactionandreducingthermalenergylossofthepolysiliconrodbyre-radiatingapartoftheabsorbedheattowardthepolysiliconrod.
DESCRIPTION
[TechnicalField]
[0001]
TheinventionrelatestoanimprovementofaCVDreactorandmorespecificallytoanarttoimprovetheproductivityofpolysiliconrodsaswellastolowerthecostsforproducingthembyreducingelectricalenergylossinSiemensCVDreactors.
[BackgroundArt]
[0002]
Polycrystallinesilicon,orpolysilicon,isacriticalrawmaterialfortheelectronicsindustry.Itisthestartingmaterialforproductionofsingleandmulti-crystalsiliconingotsforthesemiconductorandphotovoltaicindustries.Semiconductorgradepolysiliconcontainselectronically-activeimpuritiesinthepartsperbillionorpartspertrillionranges.
[0003]
Generally,polysiliconrodsaremadebythepyrolyticdecompositionofagaseoussiliconcompound,suchasmono-silaneorachlorosilane(e.g.,trichlorosilane)onarod-shaped,red-heatedstarterrodorfilamentmadepreferablyfromasiliconseedrodor,alternatively,fromahigh-meltingpointmetalhavinggoodelectricalconductivitysuchastungstenortantalum.Theprinciplesofthedesignofpresentstate-of-the-artreactorsforthepyrolysisofmonosilaneandchlorosilanesaresetforthin,forexample,U.S.Pat.Nos.3,011,877;3,147,141;3,152,933whichareincorporatedhereinbyreferenceasifsetoutinfull.ReactorsofthistypearecommonlyreferredtoasSiemensreactors.
[0004]
Fig.1showsastructureofaconventionalSiemensCVDreactor.Ingeneral,aconventionalSiemensCVDreactordevice(10)isaprocessingcontainerinwhichabell-shapedreactor(orabelljar)(30)isfixedonabaseplate(40)withagas-tightflange(33),andoneormorereactionchambers(25)areprovidedinside.Thebell-shapedreactor(30)comprisesanouterjacket(30b)andaninnershell(30a),andsinceitisconfiguredthatcoolantflowsinbetween(acoolantinputpipe(31a)andacoolantoutputpipe(31b)areconnectedtotheouterjacket(30b)),thereactor'sinnershell(30a)(referredas'cooledwall'hereafter)ismaintainedatastateofatemperaturelowerthan20
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