电子信息工程专业一种新型的集成电路片上CMOS温度传感器毕业论文外文文献翻译及原文.docx
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电子信息工程专业一种新型的集成电路片上CMOS温度传感器毕业论文外文文献翻译及原文.docx
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电子信息工程专业一种新型的集成电路片上CMOS温度传感器毕业论文外文文献翻译及原文
毕业设计(论文)
外文文献翻译
文献、资料中文题目:
一种新型的集成电路片上CMOS温度传感器
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电子信息工程
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翻译日期:
2017.02.14
普通本科毕业设计(论文)外文翻译
文献题目一种新型的集成电路片上CMOS温度传感器
ANovelBuilt-inCMOSTemperatureSensorforVLSICircuits
WangNailong,ZhangShengandZhouRunde
(InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084,China)
Abstract:
AnoveltemperaturesensorisdevelopedandpresentedespeciallyforthepurposeofonlinethermalmonitoringofVLSIchips.Thissensorrequiresverysmallsiliconareaandlowpowerconsumption,andthesimulationresultsshowthatitsaccuracyisintheorderof018℃.TheproposedsensorcanbeeasilyimplementedusingregularCMOSprocesstechnologies,andcanbeeasilyintegratedtoanyVLSIcircuitstoincreasetheirreliability.
Keywords:
temperaturesensor;thermaltestability;frequencyoutput.
EEACC:
1265A;2560;2570D
CLCnumber:
TN47 Documentcode:
A ArticleID:
025324177(2004)0320252205
1 Introduction
Duetotheadvancesinthefabricaionprocessfieldofintegratedcircuits,thecomponentdensityandtheoverallpowerdissipationofthehighperformanceVLSIchipsincreasecontinuously.Atthebeginningofthiscentury,thepowerdissipatedinasinglechiphasexceeded100W,andtightlypackedchipassembliesasthemultichipmodulescanevendissipatethousandswatts.Therefore,thethermalstateofintegratedcircuitshasbeenalwaysagreatproblemconcernedandisconsideredasabottleneckinincreasingtheintegrationofelectronicsystems.Toovercomethisproblem,manyresearchersdevelopedlow2powerdesigntechniquesforVLSIsystems.Inordertoavoidthermaldamages,continuousthermalmonitoringshouldbeappliedduringboththeproductionreliabilitytestingandthefieldoperation.AnefficientwayistobuildtemperaturesensorsintoallVLSIchips,withtheappropriatecircuitryprovidingeasyreadout.Insomeearlierworks,theresearchersusedtheparasitic,lateralorsubstratebipolartransistors,whichcanberealizedinmostoftheCMOSprocesses,asthermalsensors.TheseareusuallyPTATsensors.TheweaknessofthesesenorsisthatthebipolarstructuresarenotwellcharacterizedinaMOSprocess.Thus,althoughtheycanprovideasatisfiectsolutionforagivenprocess,thecircuitscannotberegardedasageneralCMOSapproachandcannotbewidelyused.
2 Problemformulation
Therearevarioustemperaturesensorssuitableforthermalstateverificationofintegratedcircuitmicrostructuressuchasthermoresistors,pnjunctions,andtheexploitationoftheweakinversionofMOStransistors.Ourobjectiveistoconvertthetemperaturetoanoscillatingsignaltomakeitcompatibletodigitalcircuitdesignmethodandfacilitatetheevaluationofthetemperaturesensed.AtemperaturesensorbasedonaringoscillatorisintroducedinRef.,thiscellguaranteesaaccuracyof3℃thatismarginallyacceptableasachiptemperaturesensorbutthesiliconarearequiredisratherbig.AMOStemperaturecontrolledoscillatorisusedasasensortomonitorthethermalstateofmicroelectronicstructuresinRef.However,thissensorrequiresabout10to15mWpowertodrivethethermaldelaylineandthedissipatertransistor.
Toovercometheseinconveniences,wethinkthatthetemperaturesensorstobeusedasbuiltinunitsforVLSIcircuitsonlinethermalmonitoringshouldmeetsomespecialrequirementsasfollows:
(1)Nearlylinearityinatemperaturerange(usually0~100℃);
(2)Lowpowerconsumption(nomorethan1mW);
(3)Simplestructureandsmallsiliconarea(usuallynomorethan40transistors);
(4)Easyreadoutresultswithfavorablydigitaloutputsignal(e.g.,thefrequencyofasquarewavewhichcarriesthetemperatureinformation);
(5)Easy(onepoint)calibration;
(6)Highaccuracy(intheorderof2℃orless);
(7)CompatibilitywiththepresentCMOSprocess;Consideringthegivenrequirements,wepresentanewbuiltintemperaturesensormeetingalltheaboverequirements
3 Built-inthermalmonitoringsensor
OurnewtemperaturesensorisavoltagecontrolledrelaxationoscillatorbasedtemperaturesensorshowninFig.1.Thecircuitconsistsoftwoparts,avoltageoutputsensorandarelaxationoscillator.
Fig.1 Temperaturesensordesignedbasedona
voltage2controlledrelaxationoscillator
3.1 Voltage-outputsensor
OurvoltageoutputsensorcircuitexploitsthetemperaturedependenceofthemosimportantparameteroftheMOStransistor,namely,thethresholdvoltage(VT).Thethresholdvoltagehasanegativetemperaturecoefficientas:
VT(T)=VT(T0)+a(T-T0)
(1)
whereaisthetemperaturecoefficientwithatypicalvalueof-118mVöKinCMOS0135Lm5Vtechnology;VT(T0)isthevalueofthethresholdvoltageattemperatureT0.AsshowninFig.1,thevoltageoutputsensorisathresholdvoltagereferencecell.ThepchanneltransistorsP1,P2constituteacurrentmirror.ThecurrentoftransistorN1ismirroredtotansistorsN2,N3,andN4.ThevoltagedroponthesetransistorsisfedbacktothegateofN1.Foreasycalculating,wechooseasamesizeofthetransistorsN2,N3,andN4(BN2=BN3=BN4),andwechooseappropriatesizeoftheothertransistorstoensurethatthetransistorsP1,P2,N1,N2,N3,andN4areallinthestateofsaturation.Thentheoutputvoltagesofthissensorareindirectproportiontothethresholdvoltageandlinearwithtemperatureandtheirvaluesare:
VH=VT(1+2KP12KP12-3KN12)=k1VT
(2)
VL=VT(1+2KN12KP12-3KN12)=k2VT(3)
where
isdeterminedbytheratiobetweenthegatesizesofthenchanneltransistorN1andN2,and
istheratioofthegatesizesofthepchanneltransistorP1andP2.
Byadjustingthesizesofthetransistors,wefound
shouldbebiggerthanthreetimesof,whenthetransistorsP1,P2,N1,N2,N3,andN4areallinthestateofsaturation.Theadvantagesofthiscircuitarrangemetarethesimplicityandthestableoutput.AnimportantfeatureisthattheoutputvoltagesofVHandVLarepracticallyindependentofthesupplyvoltage(VDD).
3.2 Voltage-controlledrelaxationoscillator
Thequickinterfacingoftheanalogue,currentoutputsensorwiththedigitalenvironmentisnotasimpletask.Toovercomethisproblemweuseavoltagecontrolledrelaxationoscillatorasthevoltagefrequencyconverter.Theoutputsignalofthisconverterisasquarewave,thefrequencyofwhichcarriesthetemperatureinformation.Thisfrequencycanbeeasilyturnedintoadigitalnumberbycountingthesquarewavepulsesinaprescribedtimewindow.AsshowninFig.1,thecurrentoftheresistorismirroredusingthetransistorsP3,P4,P5,N5,N6toprovidethesamesourceandsinkcurrentstochargeanddischargethecapacitorC.Assumingtheinitialvalueofthefoscislogic0,thenthetransistorP6isonandthetransistorN7isoffcausingthecapacitorCtobechargedusingthesourcecurrentIuntilVcexceedstheupperthresholdVH.Whenthisoccurs,theoutputlatchtogglesandthelogicvalueoffoscbecomeslogic1,whichinturnmakesthetransistorP6offandthetransistorN7on.ThismakesthecapacitorCtobedischargedbythesinkcurrentuntilthecapacitrvoltagefallsbelowalowerthresholdVLatwhichtimetheentirecyclerepeats.Neglectingthedelayofthecomparators,latchandtransistorsP6andN7,theoscillationcycletimeshouldbe:
AsthecurrentissmallandtheWöLratioofthetransistorP3ischosentobebiginthisdesign,theVgspcanbeapproximatedtothethresholdvoltageofthetransistorP1andtherefoethecurrentcanbeapproximatedby
AndthetemperaturedependenceoftheresistorRsis
wherekisthetemperaturecoeficientoftheresistor,withtypicalvaluek=255×10-6ö℃forpolysiliconsheetresistorintheCMOS0135Lm5Vtechnology.Therefore,theoscillationcycletimeisfoundtobe
Thisequationimpliesthatthecycletimeoftherelaxationoscillatorisnearlylinearwithtemperature,andthenthefrequencyoftheoscillatoris
4 Simulationresultsanddiscussion
ThesimulationresultofthevoltageoutputthermalsensorisillustratedinFig.2,andthevariaionoftherelaxationoscillatorbasedsensoroscillationcycletimeandfrequencyversusthechiptemperatureisshowninFig.3.Toevaluateabuildinthermalsensor,therearethreeimportantcharacteristics:
accuracy,sili2conarea(transistornumber),andpower
dissipation.ThecharacteristicsofourvoltagecontrolledrelaxationoscillatorbasedsensorisshowninTable1:
5 Conclusion
Inthispaper,apracticalandefficientbuiltintemperaturesensorforthermalmonitoringoftheintegratedcircuitsisintroduced.Themainadvantagesofthepresentedchiptemperaturesensorsarelowsiliconarea,lowpowerdissipation,digitaloutputinformofoscillationfrequency,highaccuracy,andeasilyimplementedusingregularCMOSprocesstechnologies.Therefore,thissensorcanbeeasilyintegratedtoanyVLSIcircuitstoincreasecircuitsreliability.
References
[1] ChandrakasanA,ShengS,BrodersonR.Low2powerCMOSdigitaldesign.IEEEJSolid2StateCircuits,1992,27(4):
473
[2] NebelW,MermetJ.Lowpowerdesignindeepsubmicronelectronics.Boston:
KluwerAcademicPublishers,1997,Chapter4.1
[3] MontaneE,BotaSA,SamitierJ.Acompacttemperaturesen2sorofa110LmCMOStechnologyusinglateralPNPtransistors.In:
ProcTHERMINIC’96Workshop,1996:
45
[4] BianchiRA,KaramJM
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