Atmel0299PEEPROMAT28BV64BDatasheet.docx
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Atmel0299PEEPROMAT28BV64BDatasheet.docx
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Atmel0299PEEPROMAT28BV64BDatasheet
AT28BV64B
Features
•Single2.7Vto3.6VSupply
•HardwareandSoftwareDataProtection
•LowPowerDissipation
–15mAActiveCurrent
–20µACMOSStandbyCurrent
•FastReadAccessTime–200ns
•AutomaticPageWriteOperation
–InternalAddressandDataLatchesfor64Bytes
–InternalControlTimer
•FastWriteCycleTimes
–PageWriteCycleTime:
10msMaximum
–1to64BytePageWriteOperation
•DATAPollingforEndofWriteDetection
•High-reliabilityCMOSTechnology
–Endurance:
100,000Cycles
–DataRetention:
10Years
•JEDECApprovedByte-widePinout
•IndustrialTemperatureRanges
•Green(Pb/Halide-free)PackagingOnly
1.Description
TheAtmel®AT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonly-memory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby
8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationofjust54mW.Whenthedeviceisdeselected,theCMOSstandbycurrentislessthan20µA.
TheAT28BV64BisaccessedlikeastaticRAMforthereadorwritecyclewithouttheneedforexternalcomponents.Thedevicecontainsa64bytepageregistertoallowwritingofupto64bytessimultaneously.Duringawritecycle,theaddressesand1to64bytesofdataareinternallylatched,freeingtheaddressanddatabusforotheroperations.Followingtheinitiationofawritecycle,thedevicewillautomaticallywritethelatcheddatausinganinternalcontroltimer.TheendofawritecyclecanbedetectedbyDATApollingofI/O7.Oncetheendofawritecyclehasbeendetectedanewaccessforareadorwritecanbegin.
Atmel’sAT28BV64Bhasadditionalfeaturestoensurehighqualityandmanufactur-ability.Asoftwaredataprotectionmechanismguardsagainstinadvertentwrites.Thedevicealsoincludesanextra64bytesofEEPROMfordeviceidentificationortracking.
Atmel-0299K-PEEPROM-AT28BV64B-Datasheet_072014
2.
A7A12NCDCVCCWE
NC
PinConfigurations
2.232-leadPLCCTopView
4
3
2
1
32
31
30
PinName
Function
A0-A12
Addresses
CE
ChipEnable
OE
OutputEnable
WE
WriteEnable
I/O0-I/O7
DataInputs/Outputs
NC
NoConnect
DC
Don’tConnect
A65
A56
A47
A38
A29
A110
A011
NC12
14
15
16
17
18
19
20
I/O013
29A8
28A9
27A11
26NC
25OE
24A10
23CE
22I/O7
21I/O6
I/O1I/O2GNDDCI/O3I/O4
I/O5
Note:
PLCCpackagepins1and17areDon’tConnect.
28
27
26
25
24
23
22
21
20
19
18
17
16
15
2.128-leadSOICTopView
2.328-leadTSOPTopView
NCA12A7A6A5A4A3A2A1A0I/O0I/O1I/O2GND
VCCWENCA8A9A11OEA10CEI/O7I/O6I/O5I/O4I/O3
OE1
A112
A93
WE6
VCC7
NC8
A129
A710
A512
A413
A314
28A10
27CE
26I/O7
23I/O4
22I/O3
21GND
20I/O2
19I/O1
17A0
16A1
15A2
3.BlockDiagram
4.DeviceOperation
4.1Read
TheAT28BV64BisaccessedlikeastaticRAM.WhenCEandOEarelowandWEishigh,thedatastoredatthememorylocationdeterminedbytheaddresspinsisassertedontheoutputs.TheoutputsareputinthehighimpedancestatewheneitherCEorOEishigh.Thisdual-linecontrolgivesdesignersflexibilityinpreventingbuscontentionintheirsystems.
4.2ByteWrite
AlowpulseontheWEorCEinputwithCEorWElow(respectively)andOEhighinitiatesawritecycle.TheaddressislatchedonthefallingedgeofCEorWE,whicheveroccurslast.ThedataislatchedbythefirstrisingedgeofCEorWE.Onceabytewritehasbeenstarted,itwillautomati-callytimeitselftocompletion.OnceaprogrammingoperationhasbeeninitiatedandforthedurationoftWC,areadoperationwilleffectivelybeapollingoperation.
4.3PageWrite
ThepagewriteoperationoftheAT28BV64Ballows1to64bytesofdatatobewrittenintothedeviceduringasingleinternalprogrammingperiod.Apagewriteoperationisinitiatedinthesamemannerasabytewrite;thefirstbytewrittencanthenbefollowedby1to63additionalbytes.Eachsuccessivebytemustbewrittenwithin100µs(tBLC)ofthepreviousbyte.IfthetBLClimitisexceeded,theAT28BV64Bwillceaseacceptingdataandcommencetheinternalpro-grammingoperation.AllbytesduringapagewriteoperationmustresideonthesamepageasdefinedbythestateoftheA6toA12inputs.ForeachWEhightolowtransitionduringthepagewriteoperation,A6toA12mustbethesame.
TheA0toA5inputsspecifywhichbyteswithinthepagearetobewritten.Thebytesmaybeloadedinanyorderandmaybealteredwithinthesameloadperiod.Onlybyteswhicharespec-ifiedforwritingwillbewritten;unnecessarycyclingofotherbyteswithinthepagedoesnotoccur.
4.4DATAPolling
TheAT28BV64BfeaturesDATAPollingtoindicatetheendofawritecycle.DuringabyteorpagewritecycleanattemptedreadofthelastbytewrittenwillresultinthecomplementofthewrittendatatobepresentedonI/O7.Oncethewritecyclehasbeencompleted,truedataisvalidonalloutputs,andthenextwritecyclemaybegin.DATAPollingmaybeginatanytimeduringthewritecycle.
4.5ToggleBit
InadditiontoDATAPolling,theAT28BV64Bprovidesanothermethodfordeterminingtheendofawritecycle.Duringthewriteoperation,successiveattemptstoreaddatafromthedevicewillresultinI/O6togglingbetweenoneandzero.Oncethewritehascompleted,I/O6willstoptogglingandvaliddatawillberead.Readingthetogglebitmaybeginatanytimeduringthewritecycle.
4.6DataProtection
Ifprecautionsarenottaken,inadvertentwritesmayoccurduringtransitionsofthehostsystempowersupply.Atmelhasincorporatedbothhardwareandsoftwarefeaturesthatwillprotectthememoryagainstinadvertentwrites.
4.6.1HardwareProtection
HardwarefeaturesprotectagainstinadvertentwritestotheAT28BV64Binthefollowingways:
(a)VCCpower-ondelay–onceVCChasreached1.8V(typical)thedevicewillautomaticallytimeout10ms(typical)beforeallowingawrite;(b)writeinhibit–holdinganyoneofOElow,CEhighorWEhighinhibitswritecycles;and(c)noisefilter–pulsesoflessthan15ns(typical)ontheWEorCEinputswillnotinitiateawritecycle.
4.6.2SoftwareDataProtection
Asoftware-controlleddataprotectionfeaturehasbeenimplementedontheAT28BV64B.Softwaredataprotection(SDP)helpspreventinadvertentwritesfromcorruptingthedatainthedevice.SDPcanpreventinadvertentwritesduringpower-upandpower-downaswellasanyotherpotentialperiodsofsysteminstability.
TheAT28BV64Bcanonlybewrittenusingthesoftwaredataprotectionfeature.Aseriesofthreewritecommandstospecificaddresseswithspecificdatamustbepresentedtothedevicebeforewritinginthebyteorpagemode.Thesamethreewritecommandsmustbegineachwriteoperation.Allsoftwarewritecommandsmustobeythepagemodewritetimingspecifications.Thedatainthe3-bytecommandsequenceisnotwrittentothedevice;theaddressesinthecommandsequencecanbeutilizedjustlikeanyotherlocationinthedevice.
Anyattempttowritetothedevicewithoutthe3-bytesequencewillstarttheinternalwritetimers.Nodatawillbewrittentothedevice;however,forthedurationoftWC,readoperationswilleffec-tivelybepollingoperations.
4.7DeviceIdentification
Anextra64bytesofEEPROMmemoryareavailabletotheuserfordeviceidentification.ByraisingA9to12V±0.5Vandusingaddresslocations0000Hto003FH,theadditionalbytesmaybewrittentoorreadfrominthesamemannerastheregularmemoryarray.
5.DCandACOperatingRange
AT28BV64B-20
OperatingTemperature(Case)
-40︒C-85︒C
VCCPowerSupply
2.7Vto3.6V
6.OperatingModes
Mode
CE
OE
WE
I/O
Read
VIL
VIL
VIH
DOUT
Write
(2)
VIL
VIH
VIL
DIN
Standby/WriteInhibit
VIH
X
(1)
X
HighZ
WriteInhibit
X
X
VIH
WriteInhibit
X
VIL
X
OutputDisable
X
VIH
X
HighZ
ChipErase
VIL
V(3)H
VIL
HighZ
Notes:
1.XcanbeVILorVIH.
2.RefertoACProgrammingWaveforms.3.VH=12.0V±0.5V.
7.
TemperatureUnderBias...............................-55︒Cto+125︒C
StorageTemperature.....................................-65︒Cto+150︒C
AllInputVoltages(includingNCPins)
withRespecttoGround...................................-0.6Vto+6.25V
AllOutputVoltages
withRespecttoGround.............................-0.6VtoVCC+0.6V
VoltageonOEandA9
withRespecttoGround...................................-0.6Vto+13.5V
AbsoluteMaximumRatings*
*NOTICE:
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdam-agetothedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability
8.DCCharacteristics
Symbol
Parameter
Condition
Min
Max
Units
ILI
InputLoadCurrent
VIN=0VtoVCC+1V
10
µA
ILO
OutputLeakageCurrent
VI/O=0VtoVCC
10
µA
ISB
VCCStandbyCurrentCMOS
CE=VCC-0.3VtoVCC+1V
50
µA
ICC
VCCActiveCurrent
f=5MHz;IOUT=0mA
15
mA
VIL
InputLowVoltage
0.6
V
VIH
InputHighVoltage
2.0
V
VOL
OutputLowVoltage
IOL=1.6mA
0.45
V
VOH
OutputHighVoltage
IOH=-100µA
2.0
V
9.ACReadCharacteristics
Symbol
Parameter
AT28BV64B-20
Units
Min
Max
tACC
AddresstoOutputDelay
200
ns
tCE
(1)
CEtoOutputDelay
200
ns
t
(2)OE
OEtoOutputDelay
0
80
ns
tDF(3)(4)
CEorOEtoOutputFloat
0
55
ns
tOH
O
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