pspice二级管参数总结.docx
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pspice二级管参数总结.docx
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pspice二级管参数总结
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OrCADPSpiceDIODEmodelparameter
2010-07-1522:
31
1.从OrCADPSpicehelp文档:
Modelparameters1
Description
Unit
Default
AF
flickernoiseexponent
1.0
BV
reversebteakdov.xkt>eevoltage
vok
♦irfuute
CJO
zeic>-biasp-ncapacitance
farad
0.0
EG
bsuxkapvoltageibaiuciLaght;
eV
1.11
FC
fbx-ASidbiisdepletioncapacitancecoefficient
0.5
IBVL
k>v.-levdreversebi&k&>\vnkneecinteni
砂〉
0.0
IBV
reversebteskdo^kneecuhm
anip
IE-10
IKF
high-injectionkneecutient
吨
infinite
IS
satuxationcuxrewt
23Hp
IE-14
ISR
Tecombuiatiosieinrempaxametei
G.O
KF
flickernoisecoeffioienl
0.0
¥
p-ticradmcoc^efficieiit
0.5
emissioncoeffizieut
1.0
NBV
Te\er$ebreakdownideaBhfactot
1.0
2.国外网站的相
SPICEDiodeMo
k>w-le\-elTevei疋breakdownidealityfactoi
10
NR
emissionooeffitSentforia
20
RS
paiaodtkresistance
•In
0.0
bvEperahgcoeflkienl(Irnea)
•c-l
0.0
T5V2
bvtcmpeiahnecoefficientfquackatic)
•C-2
0.0
rrxr
iftemjxfature仙迪)
CC-1
0.0
TRS1
rstemp^ranireg曲:
Sarj
CC-1
0.0
TRS2
isteinpetahHecoeffiSent(quadxatk;»
:
C-2
0.0
IT
hansiltiiue
xc
0.0
TASS
absolutetempeiatuie
:
C
TMEASURED
mcasuiirdt-iupeiatuie
■c
TRELGLOSAL
jehir/etocuiientteuipeiatuie
-c
TRZLLOCAL
Rchth-etoAKOtuc-delteiuperature
:
c
p-npotential
wh
1.0
xrr
关介绍:
delParameters
IStMuperarureexpcment
3.0
name
parameter
units
default
example
area
1
IS
saturationcurrent
A
1.Oe-14
1.Oe-14
*
2
RS
ohmicresistanc
Ohm
0
10
*
3
N
emissioncoefficient
1
1.0
4
TT
transit-time
sec
0
0.Ins
5
CJO
zero-biasjunctioncapacitance
F
0
2pF
*
6
VJ
junctionpotential
V
1
0.6
7
M
gradingcoefficient
0.5
0.5
8
EG
band-gapenergy
eV
1.11
1.11Si
9
XTI
saturation-currenttemp・exp
3.0
3.0pn2.0
Schottky
:
10
KF
flickernoisecoefficient
0
11
AF
flickernoiseexponent
—
1
12
FC
coefficientforforward-biasdepletioncapacitanceformula
—
0.5
13
BV
reversebreakdownvoltage
V
infinite
40.0
14
IBV
currentatbreakdownvoltage
V
1.Oe-3
15
TNOM
parametermeasurementtemperature
degC
27
50
TheDCcharacteristicsofthediodearedeterminedbytheparametersIS,N,andtheohmicresistanceRS・Chargestorageeffectsaremodeledbyatransittime,TT,andanonlineardepletionlayercapacitancewhichisdeterminedbytheparametersCJO,VJ,andThetemperaturedependenceofthesaturationcurrentisdefinedbytheparametersEG,thebandgapenergyandXTI,thesaturationcurrenttemperatureexponent・ThenominaltemperatureatwhichtheseparametersweremeasuredisTNOM,whichdefaultstothecircuit-widevaluespecifiedonthe・0PTIONScontrolline・ReversebreakdownismodeledbyanexponentialincreaseinthereversediodecurrentandisdeterminedbytheparametersBVandIBV(bothofwhicharepositivenumbers)・
3.国外网站关于PSpice其它模型的参数介绍:
如(三极管,达林顿管,场效应管,二极管)
Spicemodels
•Introduction
•TheMODmodelfile
•TheZMODELS.LIBlibraryfile
•Modelparametersandlimitations
•Bipolars
•Darlingtons
•MOSFETs
•Diodes
•Furtherinformation
Introduction
ZetexhavecreatedSpicemodelsforarangeofsemiconductorcomponents・ModelsincludedareSchottkyandvaricap,high-performancebipolar(highcurrent,lowVCE(sat)),highervoltagebipolar,bipolarDarlingtonandMOSFETtransistors・Thisrangeiscontinuouslyunderreviewasnewproductsareintroducedandretrospectivemodelsaregeneratedforexistingproducts・
TheSpicemodelsareavailableintwoformats:
1.AseparateSpicemodeltextfileforeachZetexdevicetypeforwhichamodelispresentlyavailable・ThesecanbeaccessedfromtheProductQuickfinder
2.AlltheavailableZetexdevicemodelsarecollectedtogetherintoasingle・LIBtextfilecalledZMODELS・LIB・
AgenericsymbollibraryfileisavailablecalledZETEXM・SLBthatenablesWindows?
versionsofPSpicetousetheZetexspicemodels・Furtherinformationonthesymbollibrary,includinginstallationinstructionswillbefoundinthetextfilecalledZETEXM.TXT
TheMODModelFile
EachofthesefilesisaSpicemodelforasingledevice・TheycanbeloadedintoyoursimulationsimplybyemployingtheSpicecommand〈・includedevice_name・mod>・Onlythedevicetypesspecificallyrequiredbythecircuitundersimulationneedbeincludedinthisway.Alldiodeandbipolartransistormodelsaresimple〈・model>files・However,DarlingtontransistorsandMOSFETmodelsaremulti-componentsubcircuitsandassucharesuppliedas〈・subckt>files・
ThediodemodelsshouldbeincludedincircuitfilesusingthenormalSpicereference
Bipolartransistormodelsshouldbeincludedusing
Allothermodelsshouldbereferencedassubcircuitsi・e.intheform
TheZMODELS.LIBLibraryFile
Usersmayprefertousethemodellibrary.Thislibraryisa
collectionofallZetexSpicemodelsexactlyastheyappearintheindividualmodelfiles・Byusingthestatement〈・libzmodels・lib>,Spicewillbeabletoaccessanymodelwithinthelibrarywithouttheneedformultiple〈・include〉statements・
Note:
Allsubcircuits,whetherinthelibraryorasindividualmodelfilesusethesameconnectionsequenceasSpiceforsingleelementmodels,thuseasingtheiruse・
Modelparametersandlimitations
•Bipolars
•Darlingtons
•MOSFETs
•Diodes
Bipolars
AllbipolartransistorandDarlingtonmodelsarebasedonSpice'smodifiedGummel-Poonmode1.Atypicalmodelforasingletransistorisshownasfollows:
水ZetexFMMT493ASpiceModelvl.0LastRevised30/3/06
.MODELFMMT493ANPNIS二6E-14NF=0.99BF=1100IKF二1.1
+NK二0.7VAF二270ISE二0.3E-14NE=1.26NR=0.98BR=70IKR二0.5
+VAR二27ISC=1.2e-13NC=1.2RB=0.2RE二0・08RC二0・08RCO=8
+GAMMA二3E-9CJC=15.9E-12MJC=O.4VJC=O.51CJE二108E-12
+MJE二0.35VJE二0.7TF二0.8E-9TR=55e-9XTB二1.4QUASIMODO
Inthebipolarmodel:
•ISandNFcontrolIcboandthevalueofIcatmediumbiaslevels・
•ISEandNEcontrolthefallinhFEthatoccursatlowIc.
•BFcontrolspeakforwardhFEandXTBcontrolshowitvarieswithtemperature・
•BRcontrolspeakreversehFEi・e.collectorandemitterreversed・
•IKFandNKcontrolthecurrentandtherateatwhichhFEfallsathighcollectorcurrents・
•IKRcontrolswherereversehFEfallsathighemittercurrents・
•ISCandNCcontrolsthefallofreversehFEatlowcurrents・
•RC,RBandREaddseriesresistancetothesedeviceterminals・
•VAFcontrolsthevariationofcollectorcurrentwithvoltagewhenthetransistorisoperatedinitslinearregion.
•VARisthereverseversionofVAF.
•CJC,VJCandMJCcontrolCcbandhowitvarieswithVcb.
•CJE,VJEandMJEcontrolCbeCcbandhowitvarieswithVeb.
•TFcontrolsFtandswitchingspeeds・
•TRcontrolsswitchingstoragetimes・
•RCO,GAMMA,QUASIMODcontrolthequasi-saturationregion.
SomestandardbipolartransistorSpicemodelsmaynotincludeaparameterthatallowsBF,thehFEparameter,tovarywithtemperature・IfXTBisabsentitdefaultstozero,e.g・notemperaturedependence・IfhFEtemperatureeffectsareofinterestandXTBisnotmodeledthenthefollowingvaluesmaybeusedtoprovideanestimateorastartingpointforfurtherinvestigation:
Polarity
XTB
NPN
1.6
PNP
1.9
ItissuggestedthattheappropriatedatasheethFEprofileisexamined,andaSpicetestcircuitcreatedthatsimulatesthedeviceinquestionandgeneratesasetofhFEcurves・TwoorthreesuchiterationsshouldnormallybesufficienttodefineavalueforXTBineachcase・Pleaserememberthatthesenotesareonlyaroughguideastotheeffectofmodelparameters・Also,manyoftheparametersareinterdependentsoadjustingoneparametercanaffectmanydevicecharacteristics・
AtZetex,wehaveendeavoredtomakethemodelsperformascloselytoactualsamplesaspossiblebutsomecompromisesareforcedwhichcanresultinsimulationerrorsundersomecircumstances・Themainareasof
errorobservedsofarhavebeen:
•SpiceisoftenoveroptimisticinthehFEatransistorwillgivewhenoperatedaboveitsdatasheetcurrentratings・Thisisparticularlytrueforahighvoltagetransistoroperatedatalowcollector-emittervoltageandquasi-saturationparametersRCO,GAMMAandQUASIMODhavebeenintroducedtoimprovethemodelsinthisregion.
•Spicecanbepessimisticwhenpredictingswitchingstoragetimewhencurrentisextractedfromthebaseofatransistortospeedturn-off.
Darlingtons
Thesearesubcircuitsusingastandardtransistormode1.ADarlingtonmodelisshownasfollows:
•
:
xZetexFZT605SpiceModelvl.0Lastrevision27/04/05
*
.SUBCKTFZT605123
*CBE
QI124SUB605
Q2143SUB6053.46
*
.MODELSUB605NPNIS二4.8E-14BF二170etc.
・ENDSFZT605:
:
:
Note:
BecauseZetexDarlingtonsaremonolithic,thetwotransistorsusedareidenticalinallrespectsotherthansize・(ThenumberattheendoftheQ2linemultipliesthesizeoftheSUB605transistorby3.46-theratiooftheareasoftheinputandoutputtransistorsforthisdevice)・
MOSFETs
NoneofSpice'sstandardMOSFETmodelsfitthecharacteristicsoftrenchorverticalMOSFETstoowel1・ConsequentlythemodelsofMOSFET'ssuppliedhavebeenmadeusingsubcircuitsthatincludeadditionalcomponentstoimprovesimulationaccuracy・AtypicallesscomplexMOSFETmodelisshownasfollows:
*
*ZETEXZXMN3A14FSpiceModel
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