英文翻译及文献电子电子功率半导体.docx
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英文翻译及文献电子电子功率半导体.docx
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英文翻译及文献电子电子功率半导体
英文翻译及文献电子电子功率半导体
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NewGenerationofHigh–PowerSemiconductorClosingSwitchesforPulsedPowerApplications
I.Introduction
Solidstatesemiconductorswitchesareveryinvitingtouseatpulsedpowersystemsbecausetheseswitcheshavehighreliability,longlifetime,lowcostsduringusing,andenvironmentalsafetyduetomercuryandleadareabsent.Semiconductorswitchesareabletoworkinanyposition,so,itispossibletodesignsystemsasforstationarylaboratoryusing,andformobileusing.Thereforetheseswitchesarefrequentlyregardedasreplacementofgas-dischargedevices–ignitrons,thyratrons,sparkgapsandvacuumswitchesthatgenerallyusenowinhigh-powerelectrophysicalsystemsincludingpowerlasers.b5E2RGbCAP
Traditionalthyristors(SCR>aresemiconductorswitchesmostlyusingforpulsedevices.SCRhassmallvalueofforwardvoltagedropatswitch-onstate,ithashighoverloadcapacityforcurrent,andatlastithasrelativelylowcostvalueduetothesimplebipolartechnology.DisadvantageofSCRisobservedatswitchingofcurrentpulseswithveryhighpeakvalueandshortduration.Reasonofthisdisadvantageissufficientlyslowprocessofswitch-onstateexpansionfromtriggeringelectrodetoexternalborderofp-njunctionaftertriggeringpulseapplying.ThisSCRfeatureisdefinedSCRusingintomillisecondrangeofcurrentswitching.ImprovementofSCRpulsecharacteristicscanbereachedbyusingofthedistributedgatedesign.Thisisallowedtodecreasethetimeoftotalswitch-onandgreatlyimproveSCRswitchingcapacity.Thus,ABBcompanyisexpandedthesemiconductorswitchusinguptomicrosecondrangebydesignofspecialpulseasymmetricthyristors(ASCR>.ThesedeviceshavedistributinggatestructurelikeaGTO.Thisthyristordesignandforcedtriggeringmodeareobtainedthehighswitchingcapacityofthyristor(
=150kA,
=50μs,di/dt=18kA/μs,singlepulse>.However,inthisdesigngatestructureiscoveredlargeactiveareaofthyristor(morethan50%>thatdecreasetheefficiencyofSiusingandincreasecostofdevice.p1EanqFDPw
Si-thyristorsandIGBThavedemonstratedhighswitchingcharacteristicsatrepetitivemode.However,suchdevicesdonotintendforswitchingofhighpulsecurrents(tensofkiloamperesandmore>becauseofwell-knownphysicallimitsareexistedsuchaslowdopingofemitters,shortlifetimeofminoritycarriers,smallsizesofchipsetc.DXDiTa9E3d
Ourinvestigationhaveobtainedthatswitchesbasedonreverse–switcheddinistorsaremoreperspectivesolid-stateswitchestoswitchsuperhighpowersatmicrosecondandsubmillisecondranges.Reverse–switcheddinistors(RSD>istwo-electrodeanalogueofreverseconductingthyristorwithmonolithicalintegratedfreewheelingdiodeinSi.ThisdiodeisconnectedinparallelandinthebackdirectiontothethyristorpartofRSD.TriggeringofRSDisprovidedbyshortpulseoftriggercurrentatbriefapplyingofreversalvoltagetoRSD.DesignofRSDismadethusthattriggeringcurrentpassesthroughdiodeareasofRSDquasiaxiallyanduniformlyalongtheSistructurearea.Thiscurrentproducestheoncominginjectionofchargecarriersfrombothemitterjunctionstobaseregionsandinitiatestheregenerativeprocessofswitch-onforRSDthyristorareas.SuchmethodoftriggeringforthisspecialdesignofSiplateisprovidedtotalanduniformswitchingofRSDalongallactiveareaintheveryshorttimelikeasdiodeswitch-on.ThefreewheelingdiodeintegratedintotheRSDstructurecouldbeusedasdampingdiodeatfaultmodeinthedischargecircuit.Thisfaultmodesuchasbreakdownofcablelinescanleadtooscillatingcurrentthroughswitch..RTCrpUDGiT
IthasbeenexperimentallyobtainedinthatsemiconductorswitchesbasedonRSDcanworksuccessfullyinthepulsedpowersystemstodriveflashlampspumpinghigh-powerneodymiumlasers.ItwasshowninthatRSD-switchesbasedonRSDwaferdiameterof63mm(switchtypeKRD-25-100>andRSD-switchesbasedonRSDwaferdiameterof76mm(switchtypeKRD-25-180>canswitchthecurrentpulseswithsubmilliseconddurationandpeakvalueof120kAand180kArespectively.Threeswitches(switchtypeKRD–25-180>connectedinparallelweresuccessfullytestedunderthefollowingmode:
operatingvoltage
=25kV,operatingcurrentIp=470kA,andtransferredchargeQ=145Coulombs.5PCzVD7HxA
During2000–2001,thecapacitorbankforneodymiumlaseroffacilityLUCHwasbuiltatRFNC-VNIIEF.Thisbankincluding18switchestypeKRD-25-100operatessuccessfullyduring5yearswithoutanyfailuresofswitches.jLBHrnAILg
Thisreportissubmittedresultsofdevelopmentofnewgenerationofsolidstateswitcheshavinglowlossesofpowerandhigh-currentswitchingcapacity.xHAQX74J0X
II.DevelopmentofRSD’snextgeneration
ThetechnologyoffabricationofnewRSDstructurehasbeendevelopedtoincreasetheswitchingcapacity.ThisnewstructureisSPT(SoftPunchThrough>-structure-with“soft”closingofspace-chargeregionintobuffern'-layer.LDAYtRyKfE
Decreasingofn-basethicknessandalsoimprovingofRSDswitch-onuniformitybygoodspreadingofchargecarriersonthen'-layeratvoltageinversionareprovideddecreasingofallcomponentsoflossesenergysuchaslossesattriggering,lossesattransientprocessofswitch-on,andlossesatstate-on.OurpreliminaryestimationwasshownthatsuchstructuremustprovidetheincreasingofoperatingpeakcurrentthroughRSDapproximatelyin1.5times.Zzz6ZB2Ltk
InvestigationswerecarriedoutforRSDwithblockingvoltageof2.4kVandSiwaferdiametersof63,76,and100mmbyspecialteststation.ThemaingoaloftheseinvestigationsisdefinitionofmaximumpermissiblelevelofpeakcurrentpassingthroughsingleRSDwithgivenarea.CurrentpassingthroughRSDandvoltagedroponRSDstructureduringcurrentpassingaremeasuredattesting.InFig.1waveformsofpeakcurrentsandvoltagedropsisshownforRSDwithsizeof76mmandblockingvoltageof2.4kV.dvzfvkwMI1
Fig.1.Waveformsofpulsecurrent(a>andvoltagedrop(b>forRSDwithwafersizeof76mmandblockingvoltageof2.4kVrqyn14ZNXI
InaccordingwithstudyprogramcurrentwasslowlyincreaseduntilmaximumpermissiblelevelIpm.WhenthislevelwasreachedthesharpriseofvoltageandthanthesamesharpdecayofvoltageforcurveU(t>wasobserved.Reasonofvoltageriseisstrongdecreasingofcarriermobilityathightemperature,andreasonofvoltagedecayisquickmodulationofchannelconductivitybythermalgeneratedplasmathatisappearedinaccordancewithsharpexponentialdependenceforownconcentrationofinitialsiliconintobaseareasofRSDattemperatureof400–
C.EmxvxOtOco
TestswereshownthatthissharpriseofvoltageatmaximumpermissiblecurrentdoesnotleadtoimmediatefaultofRSD.RSDkeepsitsblockingcharacteristic.However,afterpassingofsuchcurrent
wecanobservetheappearanceoferosionfromcathodeforaluminummetallizationofRSDcontacts,andthisfactisevidenceofborderlinestateofdevice.Thesubsequentincreasingofcurrent(morethan
>leadstofusingofSistructure.Therefore,levelIpmisthereferencepositiontodefinethevalueofoperationpeakcurrentforRSD-switchunderlongandrepeatedmanytimesoperatingmode.SixE2yXPq5
Wehavedeterminedthatoperatingpeakcurrent
mustbelessthan80%fromlevel
.Thisratiowasconfirmedbycalculationsandresultsoftestsunder
mode(severalthousandsofshots>.6ewMyirQFL
DataoftestresultsfornewgenerationofRSDwiththevariousdiameterofSiwaferareshowninTable1.InthisTableforcomparingresultsofthesametestsforthefirstgenerationofRSDwithsizeof63and76mmareshown.kavU42VRUs
III.SwitchesbasedonRSDofnewgeneration
Newreverse–switcheddinistorsismanufacturedintwovariants.RSDofthefirstvariantisinthelow-profilemetal-ceramichousing.ThesecondvariantisRSDfabricatedwithouthousingandwithadditionalprotectionofperipheryareafromexternalaction.y6v3ALoS89
Dinistorsplacedintohousingcanbeusedforworkunderasmono-pulsemodeandrepeated-pulsemode.Ifrepeated-pulsedmodeusingtheforcedcoolingofsemiconductordevicesandusingofheatsinkstobothsideofpelletmustbemade.Dinistorswithouthousingconnectsinseries,andsuchassemblycouldbeplacedintoasinglecompacthousing.However,suchassemblycanworkundermono-pulsemodeonly.M2ub6vSTnP
OperatingvoltageforswitchtypicallyexceedsblockingvoltageofsingleRSD(
≤2400V>,thusswitchisincludedseveralRSDsconnectedinseries.Fig.2.Reverse–switcheddinistorsforpeakcurrentfrom200kAto500kAandblockingvoltageof2400V,encapsullatedinhermeticmetal–ceramichousingandwithouthousing(RSDsizesof64,76,and100mm>.0YujCfmUCw
NumberofRSDsincludedinassemblydependsonoperatingvoltageofswitch.Therefore,technicalproblemofswitchdevelopmentismainlyoptimizationofdesignforassemblyofseveraldinistorsconnectedinseries.AlotofspecialinvestigationshavecarriedoutsuchaschoiceofoptimummaterialstoprovidebestcontactsbetweenRSDs,calculationofdynamicforcestoclampassembly,etc.TheseinvestigationsareprovidedsmallandstabletransitionelectricalandthermalresistancesbetweenRSDsthatguaranteeslongandreliableperformanceofswitch.EspecialcomputertechniquehasdevelopedtoselectRSDsforconnectioninseries.AtthisRSDselectionvalueofleakagecurrentandstabilityofblockingvolt-ampsdiagramaremeasuredespecially.ThisselectiontechniqueisallowedexcludethevoltagedividersusingforequalizationofstaticvoltageforeachRSDatassembly.Thus,aftersuchselectionswitchde
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