光电传感器中英文对照版.docx

光电传感器中英文对照版.docx

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光电传感器中英文对照版

Photoelectricsensor

Keyword：

photoelectriceffectphotoelectricelementphotoelectricsensorclassificationsensorapplicationcharacteristics.

Abstract：

intherapiddevelopmentofscienceandtechnologyinthemodernsociety，mankindhasintotherapidlychanginginformationera，peopleindailylife,theproductionprocess,relymainlyonthedetectionofinformationtechnologybyacquiring,screeningandtransmission,toachievethebrakecontrol,automaticadjustment，atpresentourcountryhasputdetectiontechniqueslistedinoneoftheprioritytothedevelopmentofscienceandtechnology。

Becauseofmicroelectronicstechnology，photoelectricsemiconductortechnology,opticalfibertechnologyandgratingtechnicaldevelopmentmakestheapplicationofthephotoelectricsensorisgrowing。

Thesensorhassimplestructure,non-contact，highreliability,highprecision,measurableparametersandquickresponseandmoresimplestructure，formetc,andflexibleinautomaticdetectiontechnology，ithasbeenwidelyappliedinphotoelectriceffectasthetheoreticalbasis，thedevicebyphotoelectricmaterialcomposition.

Text:

First,theoreticalfoundation-photoelectriceffect

Photoelectriceffectgenerallyhavethephotoelectriceffect，opticaleffect,lightbornvoltseffect.

Thelightshinesinphotoelectricmaterial，accordingtotheelectronicabsorptionmaterialsurfaceenergy,ifabsorbedenergylargeenoughelectronicelectronicwillovercomeboundfrommaterialsurfaceandentertheoutsidespace，whichchangesphotoelectronmaterials，thiskindofphenomenonbecometheconductivityofthephotoelectriceffect

AccordingtoEinstein’sphotoelectroneffect，photonismovingparticles，eachphotonenergyforhv（vforlightfrequency，hforPlanck'sconstant,h=6.63＊10—34J/HZ）,thusdifferentfrequencyofphotonshavedifferentenergy，light，thehigherthefrequency，thephotonenergyisbigger.Assumingalltheenergyphotonstophotons，electronicenergywillincrease，increasedenergypartofthefetter，positiveionsusedtoovercomeanotherpartofconvertedintoelectronicenergy.Accordingtothelawofconservationofenergy：

Type，mforelectronicquality,vforelectronicescapingthevelocity，Amicroelectronicstheworkdone。

Fromthetypethatwillmaketheoptoelectroniccathodesurfaceescapethenecessaryconditionsareh>A.Duetothedifferentmaterialshavedifferentescaping，soreactivetoeachkindofcathodematerials,incidentlighthasacertainfrequencyisrestricted，whenthefrequencyofincidentlightunderthisfrequencylimit,nomatterhowthelightintensity,won’tproducephotoelectronlaunch,thisfrequencylimitcalled”redlimit”.Thecorrespondingwavelengthfortype，cforthespeedoflight，Areactiveforescaping.

Whenisthesun，itselectronicenergy，absorbtheresistivityreduceconductivephenomenoncalledopticaleffects。

Itbelongstothephotoelectriceffectwithin.Whenlightis,ifinsemiconductorelectronicenergybigwithsemiconductorofforbiddenbandwidth,theelectronicenergyfromthevalencebandjumpintotheconductionband,form,andatthesametime，thevalencebandelectronicleftthecorrespondingcavities.Electronics,cavitationremainedinsemiconductor,andparticipateinelectricconductiveoutsideformedunderthecurrentrole。

Inadditiontometalouter,mostinsulatorsandsemiconductorhavephotoelectriceffect，particularlyremarkable,semiconductoropticaleffectaccordingtotheoptoelectronicsmanufacturingincidentlightinherentfrequency,whenlightresistanceinlight，itsconductivityincreases,resistancedrops。

Thelightintensityisstrong,itsvalue，ifthesmaller，itsresistancetostoplightbacktotheoriginalvalue。

Semiconductorproducedbylightilluminatethephenomenoniscalledlightemf,bornvoltseffectontheeffectofphotoelectricdeviceshavemadesi-basedones，photoelectricdiode,controlthyristorandopticalcouplers，etc。

Second,optoelectroniccomponentsandcharacteristics

Accordingtotheoutsideoptoelectronicsmanufacturingoptoelectronicdeviceshavephotoelectron，inflatablephototubesandphotoelectrictimesoncetube。

1.Phototubesphototubesarevariousandtypicalproductsarevacuumphototubesandinflatablephototubes,lightitsappearanceandstructureasshowninfigure1shows,madeofcylindricalmetalhalfcathodicKandislocatedinthewirescathodicaxisofanodeinApackageofsmokeintothevacuum,whenincidentlightwithinglassshellinthecathode，illuminateAsinglephotontookallofitsenergytransfertothecathodematerialsAfreeelectrons,soastomakethefreedomelectronicenergyincreaseh。

Whenelectronsgainenergymorethanescapeofcathodematerials，itreactiveAmetalsurfaceconstraintscanovercomeescape，formelectronemission。

Thiskindofelectroniccalledoptoelectronics，optoelectronicescapingthemetalsurfaceforafterinitialkineticenergy

Phototubesnormalwork,anodepotentialthanthecathode,showninfigure2。

Inoneshotmorethan”redlightfrequencyispremise,escapefromtheoptoelectroniccathodesurfacebypositivepotentialattractedtheanodeinphotoelectrictubeformingspace，calledthecurrentstream。

Theniflightintensityincreases,thenumberofphotonsbombardedthecathodemultiplied,unitoftimetolaunchphotoelectronnumberarealsoincreasing,photo—currentgreatens。

Infigure2showscircuit，currentandresistanceisthevoltagedropacrosstheonlyafunctionoflightintensityrelations，soastoachieveaphotoelectricconversion.WhentheLTToptoelectroniccathodeK,electronicescapefromthecathodesurface,andwasthephotoelectricanodeisanelectriccurrent,powerplantsabsorbdeoxidizationdeviceintheloadresistance-I,thevoltage

Phototubesphotoelectriccharacteristicsfig.03shows，fromthegraphinfluxknowable,nottoobig,photoelectricbasiccharacteristicsisastraightline.

2。

Photoelectrictimeshadthesensitivityofvacuumtubeduetolow,sowithpeopledevelopedhasmagnifiedthephotomultipliertubesphoto—currentability.Figure4isphotomultipliertubestructureschematicdrawing.

图4光电倍增结构示意图

FromthegraphcanseephotomultipliertubesalsohaveAcathodeKandananodeA,andphototubesdifferentisinitsbetweenanodeandcathodesetupseveralsecondaryemissionelectrodes，D1，D2andD3。

.。

Theycalledthefirstmultiplyelectrode,thesecondmultiplyelectrode,。

。

。

Usually，doubleelectrodefor10~15levels。

Photomultipliertubesworkbetweenadjacentelectrode，keepingacertainminimum，includingthecathodepotentialpotentials，eachmultiplyelectrodepotentialfilteringincreases,theanodepotentialsupreme。

Whentheincidentlightirradiation，cathodicKescapefromtheoptoelectroniccathodemultipliedbyfirstaccelerated,byhighspeedelectrodeD1bombardedcausedsecondaryelectronemission，D1,anincidentcangeneratemultiplesecondaryelectronphotonics，D1emitofsecondaryelectronwasD1,D2askedelectricfieldacceleration，convergedonD2andagainproducesecondaryelectronemission...Sograduallyproducesecondaryelectronemission，makeelectronicincreasedrapidly，theseelectronicfinallyarrivedattheanode，formalargeranodecurrent。

Ifanlevel，multiplyelectrodesatalllevelsforsigma，themultiplicationofrateisthemultiplicationofphotomultipliertubescanbeconsideredsigmanrate，therefore，photomultipliertubehashighsensitivity。

Intheoutputcurrentislessthan1mAcircumstances，itinaverywidephotoelectricpropertieswithinthescopeofthelinearrelationshipwithgood。

Photomultipliertubesthischaracteristic,makeitmoreforlightmeasurement.

3andphotoconductiveresistancephotoconductiveresistancewithintheworkingprincipleisbasedonthephotoelectriceffect.Insemiconductorphotosensitivematerialendsofmountelectrodelead,itcontainstransparentwindowsealedinthetubeandshellelementphotoconductiveresistance.Photoconductiveresistancepropertiesandparametersare:

1）darkresistancephotoconductiveresistanceatroomtemperature，totaldarkconditionsstableresistancecalleddarkresistance，atthecurrentflowresistanceiscalleddarkcurrent.

2）lightresistancephotoconductiveresistanceatroomtemperatureandcertainlightingconditionsstableresistancemeasured,rightnowiscalledlightresistanceofcurrentflowresistanceiscalledlightcurrent.

4，volt—amperecharacteristicsofbothendsphotoconductiveresistanceaddedvoltageandcurrentflowsthroughphotoconductiveresistanceoftherelationshipbetweencalledvolt-amperecharacteristicsshown，asshowninfigure5.Fromthegraph,theapproximatelinearvolt-amperecharacteristicsthatuseshouldbelimited,butwhenthevoltageendsphotoconductiveresistance，lestthanshowndottedlinesofpowerconsumptionarea

5，photoelectriccharacteristicsphotoconductiveresistancebetweenthepoles,lightwhenvoltagefixedtherelationshipbetweenwithbrightcurrentphotoelectriccharacteristics.CalledPhotoconductiveresistancephotoelectriccharacteristicsisnonlinear,thisisoneofthemajordrawbackofphotoconductiveresistance。

6,spectralcharacteristicsisnotthesameincidentwavelength,thesensitivityofphotoconductiveresistanceisdifferentalso。

Incidencewavelengthandphotodetectortherelationshipbetweenrelativesensitivitycalledspectralcharacteristics.Whenusedaccordingtothewavelengthrangebymetering,choosedifferentmaterialphotoconductiveresistance.

7,responsetimebyphotoconductiveresistanceafterphoto-currentneedlight，overaperiodoftime（time）risetoreachitssteadyvalue。

Similarly,instoplightphoto-currentalsoneed,overaperiodoftime（downtime）t