Infineon 2ED4820EM 48V智能高边MOSFET栅极驱动器方案.docx
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Infineon 2ED4820EM 48V智能高边MOSFET栅极驱动器方案.docx
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Infineon2ED4820EM48V智能高边MOSFET栅极驱动器方案
Infineon2ED4820-EM48V智能高边MOSFET栅极驱动器方案
Infineon公司的2ED4820-EM是用于48V汽车应用的栅极驱动器,具有功能强大的栅极输出,能驱动并联的多个MOSFET,以最大限度降低导通损耗.由于它的两种栅极输出,它支持背对背的配置,共源和共漏两种结构.在共源极配置,一个栅极输出能用来预充电大容性负载.2ED4820-EM产生栅极输出的电源,它是基于集成具有外接泵和箱式电容的一级电荷泵.器件具有SPI接口,用于容易配置,诊断和控制.器件的电源电压从20V到70V,具有两个独立的高边栅极驱动器输出,1A下拉和0.3A上拉用于快速开关的接通/关断.在睡眠模式低电源电流BAT_Q小于5μA.器件具有以下的保护特性:
电源欠压和过压检测并具有可配置重器计时器,电荷欠压检测,栅极到源极欠压检测,可配置漏极到源极过压检测,可配置过流检测以及内部超温告警和保护.主要用在48V电池保护开关,用于DC/DC转换器,马达控制单元等的48V输入保护,48V汽车继电器和保险丝替代品.本文介绍了2ED4820-EM主要特性,框图,48V电池主开关应用框图和菊花链连接图,以及评估板2ED4820-EMEB22HSV48主要特性,电路图,材料清单和PCB设计图.
2ED4820-EMisagatedriverdesignedforhighcurrent48Vautomotiveapplications,withpowerfulgateoutputstodrivemanyMOSFETsinparallelinordertominimizetheconductionlosses.Itsupportstheback-to-backconfiguration,bothcommonsourceandcommondrainstructures,thankstoitstwogateoutputs.
Incommonsourceconfiguration,onegateoutputcanbeusedtopre-chargehighlycapacitiveloads.
2ED4820-EMgeneratesthesupplyforthegateoutputsbasedonanintegratedone-stagechargepumpwithexternalpumpandtankcapacitors.2ED4820-EMcomeswithanSPIinterface,foreasyconfiguration,diagnosisandcontrol.
Severalprotectionmechanismsareprovided:
•Supplyunder-andovervoltagedetectionwithconfigurablerestarttimer
•Chargepumpundervoltagedetection
•Gatetosourceundervoltagedetectionwithimmediatelock-outtopreventlinearmodeconductionoftheMOSFETs
•Configurabledraintosourceovervoltagedetection,whichcanalsobedeactivated
•Configurableovercurrentprotectionbasedonananalogcurrentsenseamplifiercompatibleforhigh-sideorlow-sideshunttopologies
•Internalovertemperaturewarningandprotection
AninterruptpininformstheMCUwheneveroneoftheseprotectionsistriggered.StatusregisterscanthenbereadbytheMCUtounderstandwhatwasthetriggerforthenotification.
TheoutputofthecurrentsenseamplifiercanbemonitoredbytheMCUtoimplementadditionalprotections,suchaswireovertemperature.
Inaddition,2ED4820-EMenablestoimplementanopenloaddetectionmechanism,checkingthesourcevoltageoftheMOSFETswithrespecttogroundintheOFFstate.
2ED4820-EM主要特性:
•Extendedsupplyvoltagerange:
20-70V
•Twoindependenthigh-sidegatedriveroutputs
•1Apulldown,0.3Apullupforfastswitchoff/on
•Devicecontrol,configurationanddiagnosticviaSPI
•LowsupplycurrentinsleepmodeIBAT_Q<5μA
•Supportsback-to-backMOSFETtopologies(commondrainandcommonsource)
•Onebidirectionalhighorlow-sideanalogcurrentsenseinterfacewithconfigurablegain
•Configurableovercurrent/shortcircuitprotection
•Gateundervoltagelock-out
•Safestatemode(bothchannelsOFF)activatedbydirectinputpin
•Groundlossdetection
2ED4820-EM潜在应用:
•48Vbatteryprotectionswitch
•48VinputprotectionswitchforDCDCconverters,motorcontrolunitetc.
•48Vrelayandfusereplacement
图1.2ED4820-EM48V电池主开关应用框图
图2.2ED4820-EM框图
图3.2ED4820-EM菊花链连接图
图4.2ED4820-EM48V电池保护开关应用框图
图5.2ED4820-EM共漏极高边电流检测应用框图
应用电路的材料清单:
评估板2ED4820-EMEB22HSV48
The2ED4820-EMEB22HSV48fromInfineonTechnologiesisaflexibleevaluationboarddesignedtoshowcasethecapabilitiesofthe2ED4820-EM.ThisboardincludesInfineonsXMC1100XMC2GodaughterboardtointerfacetoaPCoveraUSBcable.Agraphicaluserinterface(GUI),calledConfigWizardfor2ED4820EB,isprovidedviaInfineonDevelopmentcenter.ItrunningonaWindowsPC,tocontrol,configureanddiagnozethe2ED4820-EM.
图6.评估板2ED4820-EMEB22HSV48外形图
图7.评估板2ED4820-EMEB22HSV48电源部分概述图
评估板2ED4820-EMEB22HSV48主要特性:
•TheevaluationboardisabletodeliveracontinuousDCcurrentupto20Aperchannel
Itcomeswithajumper-basedconfigurability,totestvarioustopologies.
Thevariousconfigurationsinclude:
oPowerMOSFETsconfiguredeitherincommondrainorcommonsourcetopologies
oHighsideorlowsidecurrentsense
oOptionalcapacitorpre-chargeresistivechannel,driveneitherbyonechannelofthe2ED4820-EMorbyadiscretelevelshiftersuppliedbythecharge-pumpof2ED4820-EM.
•Theboardcomeswithanytestpointsontheedgesoftheboardtoeasilychecksignalswithanoscilloscope.
•AUSBinterface(XMC2GO)isprovided,todrivetheSPIserialinterfaceof2ED4820-EMfromaPC
•AgraphicaluserinterfacerunningonaPCallowstocontrol,configureanddiagnosethe2ED4820-EM
图8.评估板2ED4820-EMEB22HSV4和PC与电源连接图
图9.评估板2ED4820-EMEB22HSV4低边电流检测配置图
图10.评估板2ED4820-EMEB22HSV4高边电流检测配置图
图11.评估板2ED4820-EMEB22HSV4电路图
(1):
电源部分
图12.评估板2ED4820-EMEB22HSV4电路图
(2):
栅极驱动器部分
评估板2ED4820-EMEB22HSV4材料清单:
图13.评估板2ED4820-EMEB22HSV4PCB设计图:
顶层和底层
图14.评估板2ED4820-EMEB22HSV4PCB设计图:
内层
图15.评估板2ED4820-EMEB22HSV4PCB设计图:
顶层装配图
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