LTPS工艺流程与技术.docx
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LTPS工艺流程与技术.docx
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LTPS工艺流程与技术
LTPS工艺流程与技术
ShanghaiTianmaMicroelectronicsCo.,LtdLTPS工艺流程与技术AMOLEDZhaoBenGang
目录a-Si<PS,andprocessKeyprocessofLTPSLTPSprocessflowSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.2
a-Si<PS,andprocessLTPS:
LowTemperaturePoly-SiliconSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.3
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.4
a-SiTFT<PSTFTSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.5
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.6
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.7
LTPS&OLEDSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.8
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.9
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.10
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.11
+dopingSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.12
KeyprocessofLTPSSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.13
CVD技术SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.14
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.15
去氢工艺FTIR检测氢含量去氢工艺:
高温烘烤;快速热退火;高温腔体或低能量激光去氢SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.16
缓冲层作用:
1.防止玻璃中的金属离子(铝,钡,钠等)在热工艺中扩散到LTPS的有源区,通过缓冲层厚度或沉积条件可以改善多晶硅背面的质量;2.有利于降低热传导,减缓被激光加热的硅冷却速率,利于硅的结晶SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.17
SiO2,SiO2/SiNxSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.18
四乙氧基硅烷SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.19
?
highcostSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.20
TEOSoxide具有低针孔密度,低氢氧含量,良好的台阶覆盖性。
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.21
绝缘层选择SiNx:
1.具有高的击穿电压特性2.具备自氢化修补功能广泛应用于非晶硅栅绝缘层3.与多晶硅的界面存在过多的缺陷和陷阱,易产生载流子捕获缺陷和阈值电压漂移,可通过SiO2/SiNx克服SiO2:
1.台阶覆盖性2.与多晶硅界面匹配,应力匹配SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.22
一般采用SiNx,SiO2,而SiO2/SiNx结构可以得到良好的电学特性,和氢化效果SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.23
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.24
结晶技术SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.25
ELA(ExcimerLaserAnnel)Sony公司提出,现在大部分多晶硅TFT公司采用linebeam工艺。
LineBeamScanmode现在技术:
XeFSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.26
晶化效果a-SiP-SiSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.27
MechanismofELAPartiallymeltingregimeNear-completemeltingregimeCompletemeltingregimeSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.28
MIC&MILC(MetalInducedLateralCrystallization)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.29
SPC(solidphasecrystallization)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.30
SPCSPCELA晶粒:
200-300nmSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.31
ComparisonofdifferentbackplaneSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.32
离子注入技术半导体掺杂:
PH3/H2,B2H6/H2V族元素(P,As,Sb)III族元素(B,Al,Ga)提供电子,形成N型半导体SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.提供空穴,形成P型半导体33
离子注入机离子束呈细线状或点状,难以得到大的电流束,采取扫描方式注入,产能低;通过质量分析装置控制注入剂量,均匀度2%离子云注入机离子束线状,电流束较长,产能较高,成本低;通过法拉第杯控制注入剂量,均匀度5%SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.34
方块电阻小于10K欧姆/□方块电阻40K---100K欧姆/□LDDSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.35
LDD作用:
抑制“热载流子效应”以较低的注入量在源极/漏极端与沟道之间掺杂,形成一浓度缓冲区,等效串联了一个大电阻,水平方向电场减少并降低了电场加速引起的碰撞电离产生的热载流子几率注入剂量过少则造成串联电阻过高,使迁移率下降;注入剂量过多则会失去降低漏极端边缘电场强度的功能.LDDSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.36
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.37
?
Repairbrokenbondsdamagediniondoping?
IncreaseconductanceofdopingareaSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.38
氢化工艺?
氢化处理的目的多晶硅晶粒间存在粒界态,多晶硅与氧化层间存在界面态,影响晶体管电性。
氢化处理以氢原子填补多晶硅原子的未結合鍵或未飽和鍵,粒界态,氧化层缺陷,以及界面态,来减少不稳态数目,提升电特性:
迁移率,阈值电压均匀性等。
?
氢化处理方法1.等离子体氢化法:
利用含氢的等离子体直接对多晶体和氧化层做处理2.固态扩散法:
SiNx薄膜作为氢化来源,特定温度烘烤使氢原子扩散进入多晶体和氧化层SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.39
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.40
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.41
LTPS的主要设备TEOSCVDPVDCVD光刻机共用产线设备HF清洗机激光晶化设备离子注入机快速热退火设备LTPS设备湿刻设备干刻设备ICP-干刻设备SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.42
快速热退火设备激光晶化设备OLED蒸镀封装AOI磨边清洗机离子注入机SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.43
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.44
FFS(Fringe-FieldSwitching)&IPS(In-PlaneSwitching)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.45
LTPS-TNLTPS-OLED2017年11月LTPS-IPS46
Poly(多晶硅刻蚀)CHD(沟道掺杂)GatePoly(多晶硅刻蚀)CHD(沟道掺杂)ND(n+掺杂)M1(gate层)PD(p+掺杂)Via1(过孔1)ND(n+掺杂)M1(gate层)PD(p+掺杂)Via1(过孔1)M2(SD层)Via2(平坦化层)ITO1PV2(passivation)ITO2ActiveSDPassivationM2(SD层)ITOPixelPV(passivation)Via2(平坦化层)RE(反射电极)PDL(像素定义层)Spacera-Si工艺LTPS-IPS47SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.LTPS-OLED
LTPSprocessflow玻璃基板清洗玻璃投入预处理GlassSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.48
RTASystemOverviewModel:
YHR-100HTCoolingstage(4层)Chamber(2个)CSTPort(3个)CSTRobot(1个)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.49
沉积缓冲层\有源层清洗PECVD缓冲层+有源层去氢防止氢爆有源层Glass工艺缓冲层材料PECVDSiNx/SiO2工艺条件Remark缓冲层有源层去氢PECVDa-SiPECVDheatchamberSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.50
多晶硅晶化Spinclean晶化多晶硅测量XRD,RAMAN,SEM,AFM,MIC,UVSLOPEGlass工艺材料O3water、BHF、CO2water、H2water工艺条件RemarkSpincleanELAXeF(351nm)51SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.
P-Si刻蚀(mask1)光刻干刻P-Si去胶GlassP-channelN-channelDriverarea工艺P-Si刻蚀材料p-Si450-500?
工艺条件PixelareaRemarkSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.52
P-Si刻蚀(mask1)Taper49SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.53
沟道掺杂(mask2)光刻Channeldoping补偿vthB+P-channelN-channel去胶PRGlassP-channelN-channelDriverarea工艺材料工艺条件PixelareaChanneldoping1.B+掺杂n沟道2.根据Vth结果,调整掺杂类型与区域SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.54
沟道掺杂SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.55
N+掺杂(mask3)第3次光刻N+doping灰化去胶PHX+PRGlassP-channel工艺材料PHx+N-channelDriverarea工艺条件IonimplantingDose:
1×1014-5×1014(ion/cm2)薄层电阻:
103-104Ω/□PixelarearemarkPHOTOPRpeelingN+dopingSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.56
N+掺杂(mask3)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.57
GATEInsulatorSpin清洗PECVDGIP-channelN-channelGlassPixelarea工艺条件Driverarea工艺Spinclean材料O3water、BHFGATEInsulatorPECVDSiO2(或SiO2/SiNx双层结构)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.58
Gate层(mask4)Spin清洗Gate成膜光刻PRPRPRPRPRGlassP-channelN-channelDriverarea工艺SpincleanPixelarea工艺条件材料O3water、BHFGATEMoNbSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.59
Gate刻蚀(干刻)ECCP干刻去胶GlassP-channelN-channelDriverarea工艺材料工艺条件PixelareaRemarkGATEMoNbSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.60
Gate刻蚀(干刻)Taper46Taper53GIloss~0AGIloss~350ASHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.61
LDD掺杂Gate掩膜LDDPHX+LDDDopingLDDDopingGlassP-channelN-channelDriverarea工艺材料工艺条件IonimplantingDose:
1×1013-5×1013(ion/cm2)薄层电阻:
104-105Ω/□Pixelarea厂商LDDPHx+SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.62
P+掺杂(mask5)第5次光刻P+doping灰化去胶B+DopingPRPRGlassP-channelN-channelDriverarea工艺材料工艺条件IonimplantingDose:
1014-1015(ion/cm2)薄层电阻:
103-104Ω/□Pixelarearemark共4次掺杂:
Channeldoping、LDD、N+doping、P+dopingP+dopingB+SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.63
P+掺杂SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.64
ILD成膜与活化(氢化)BHF清洗ILD成膜活化(氢化)GlassP-channelN-channelDriverarea工艺材料工艺条件3000?
/3000?
,SiNx/(SiH4,NH3,N2)SiO2(SiH4,N2O)Pixelarea厂商ILD成膜SiNx/SiO2活化(氢化)活化:
600℃1-3分钟氢化:
380-420℃,30分钟SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.65
Via1(mask6)光刻ICP刻蚀去胶GlassP-channelN-channelDriverarea工艺材料SiO2/SiNx/SiO21000?
/3000?
/3000?
(P-Si过孔深7000?
,gate过孔深6000?
)工艺条件Pixelarea厂商通孔刻蚀SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.66
通孔刻蚀SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.67
通孔刻蚀SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.68
SD层(mask7)BHF清洗SD成膜光刻ECCP干刻去胶MetalannealGlassP-channelN-channelDriverarea工艺材料工艺条件PixelareaRemarkSD成膜SD干刻Ti-纯Al-TiPVD100/200300/4000/700?
台阶覆盖性,腐蚀问题,接触电阻,hillock;Metalanneal350℃40minSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.69
SD成膜Power↓Ar↓成膜温度↓SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.70
SD干刻SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.71
Passivation层(mask8)清洗SiNx成膜光刻ICPorRIE去胶GlassP-channelN-channelDriverarea工艺材料SiNx(mask9)平坦化层工艺条件CVD2003000?
PixelareaRemarkRIE均可实现SiNx与Ti选择比SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.72
Passivation层SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.73
平坦化层(mask9)清洗涂布有机膜光刻GlassP-channelN-channelDriverarea工艺平坦化层材料有机膜(mask10)工艺条件Anneal后2.0umJSRPC405GPixelareaRemarkSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.74
平坦化层LTPS(TN)LTPS-OLEDLTPS-IPS75SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.
像素电极清洗ITO镀膜GlassP-channelN-channelDriverarea工艺材料工艺条件PixelareaRemark反射电极ITOSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.76
电极刻蚀(mask10)光刻湿刻去胶退火GlassP-channelN-channelDriverarea工艺反射电极刻蚀材料工艺条件ITO:
草酸ITOITO残留CDlossPixelareaRemarkLTPS-TNarray完成SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.77
反射电极清洗ITO镀膜Ag镀膜ITO镀膜GlassP-channelN-channelDriverarea工艺材料工艺条件PixelareaRemarkITO:
粗糙度与功函数,均匀性ITO/Ag/ITO一次刻蚀反射电极(ITOAgITO)Ag:
PVD400:
1000?
ITOPVD400:
150?
SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.78
电极刻蚀(mask10)光刻湿刻去胶退火GlassP-channelN-channelDriverarea工艺反射电极刻蚀材料工艺条件ITO:
草酸Ag:
铝酸ITO残留CDlossPixelareaRemark(ITOAgITO)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.79
电极刻蚀(mask10)SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.80
PDL/Spacer层(mask11/12)forOLEDGlassP-channelN-channelDriverareaPixelarea工艺材料PI工艺条件RemarkPI材料,用两张mask实现,后续考虑用halftonemaskPDL层spacerPDL层1.0-1.5umSpacer:
1.5umSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.81
PDL/Spacer层(mask11/12)LTPS-OLEDarray完成SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.82
ITO1电极清洗ITO1层GlassP-channelN-channelDriverareaPixelareaSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.83
PV2电极清洗SiNxGlassP-channelN-channelDriverareaPixelareaSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.84
ITO2电极清洗ITO2layerGlassP-channelN-channelDriverareaPixelareaSHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.85
LCD工艺TFT工程Cell工程Module工程[LCDPanel][Glass基板][TFT基板][CF][膜]绑定[驱动IC]成膜重塗布复[Glass基板][PR]液晶滴下真空贴合装配[连接电路][保护板][Mask]曝光現像刻蚀切割[BLU][信号基板]剥離検査[TFT基板]SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.[LCDPanel][LCDModule]86
OLED-CELL-MODULEprocess365*460mm730*920mm切割SHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.87
Q&ASHANGHAITIANMAMICRO-ELECTRONICSCO.,LTD.88
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