光电传感器中英文对照版.docx
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光电传感器中英文对照版.docx
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光电传感器中英文对照版
Photoelectricsensor
Keyword:
photoelectriceffectphotoelectricelementphotoelectricsensorclassificationsensorapplicationcharacteristics.
Abstract:
intherapiddevelopmentofscienceandtechnologyinthemodernsociety,mankindhasintotherapidlychanginginformationera,peopleindailylife,theproductionprocess,relymainlyonthedetectionofinformationtechnologybyacquiring,screeningandtransmission,toachievethebrakecontrol,automaticadjustment,atpresentourcountryhasputdetectiontechniqueslistedinoneoftheprioritytothedevelopmentofscienceandtechnology.Becauseofmicroelectronicstechnology,photoelectricsemiconductortechnology,opticalfibertechnologyandgratingtechnicaldevelopmentmakestheapplicationofthephotoelectricsensorisgrowing.Thesensorhassimplestructure,non-contact,highreliability,highprecision,measurableparametersandquickresponseandmoresimplestructure,formetc,andflexibleinautomaticdetectiontechnology,ithasbeenwidelyappliedinphotoelectriceffectasthetheoreticalbasis,thedevicebyphotoelectricmaterialcomposition.
Text:
First,theoreticalfoundation-photoelectriceffect
Photoelectriceffectgenerallyhavethephotoelectriceffect,opticaleffect,lightbornvoltseffect.
Thelightshinesinphotoelectricmaterial,accordingtotheelectronicabsorptionmaterialsurfaceenergy,ifabsorbedenergylargeenoughelectronicelectronicwillovercomeboundfrommaterialsurfaceandentertheoutsidespace,whichchangesphotoelectronmaterials,thiskindofphenomenonbecometheconductivityofthephotoelectriceffect
AccordingtoEinstein'sphotoelectroneffect,photonismovingparticles,eachphotonenergyforhv(vforlightfrequency,hforPlanck'sconstant,h=6.63*10-34J/HZ),thusdifferentfrequencyofphotonshavedifferentenergy,light,thehigherthefrequency,thephotonenergyisbigger.Assumingalltheenergyphotonstophotons,electronicenergywillincrease,increasedenergypartofthefetter,positiveionsusedtoovercomeanotherpartofconvertedintoelectronicenergy.Accordingtothelawofconservationofenergy:
Type,mforelectronicquality,vforelectronicescapingthevelocity,Amicroelectronicstheworkdone.
Fromthetypethatwillmaketheoptoelectroniccathodesurfaceescapethenecessaryconditionsareh>A.Duetothedifferentmaterialshavedifferentescaping,soreactivetoeachkindofcathodematerials,incidentlighthasacertainfrequencyisrestricted,whenthefrequencyofincidentlightunderthisfrequencylimit,nomatterhowthelightintensity,won'tproducephotoelectronlaunch,thisfrequencylimitcalled"redlimit".Thecorrespondingwavelengthfortype,cforthespeedoflight,Areactiveforescaping.
Whenisthesun,itselectronicenergy,absorbtheresistivityreduceconductivephenomenoncalledopticaleffects.Itbelongstothephotoelectriceffectwithin.Whenlightis,ifinsemiconductorelectronicenergybigwithsemiconductorofforbiddenbandwidth,theelectronicenergyfromthevalencebandjumpintotheconductionband,form,andatthesametime,thevalencebandelectronicleftthecorrespondingcavities.Electronics,cavitationremainedinsemiconductor,andparticipateinelectricconductiveoutsideformedunderthecurrentrole.
Inadditiontometalouter,mostinsulatorsandsemiconductorhavephotoelectriceffect,particularlyremarkable,semiconductoropticaleffectaccordingtotheoptoelectronicsmanufacturingincidentlightinherentfrequency,whenlightresistanceinlight,itsconductivityincreases,resistancedrops.Thelightintensityisstrong,itsvalue,ifthesmaller,itsresistancetostoplightbacktotheoriginalvalue.
Semiconductorproducedbylightilluminatethephenomenoniscalledlightemf,bornvoltseffectontheeffectofphotoelectricdeviceshavemadesi-basedones,photoelectricdiode,controlthyristorandopticalcouplers,etc.
Second,optoelectroniccomponentsandcharacteristics
Accordingtotheoutsideoptoelectronicsmanufacturingoptoelectronicdeviceshavephotoelectron,inflatablephototubesandphotoelectrictimesoncetube.
1.Phototubesphototubesarevariousandtypicalproductsarevacuumphototubesandinflatablephototubes,lightitsappearanceandstructureasshowninfigure1shows,madeofcylindricalmetalhalfcathodicKandislocatedinthewirescathodicaxisofanodeinApackageofsmokeintothevacuum,whenincidentlightwithinglassshellinthecathode,illuminateAsinglephotontookallofitsenergytransfertothecathodematerialsAfreeelectrons,soastomakethefreedomelectronicenergyincreaseh.Whenelectronsgainenergymorethanescapeofcathodematerials,itreactiveAmetalsurfaceconstraintscanovercomeescape,formelectronemission.Thiskindofelectroniccalledoptoelectronics,optoelectronicescapingthemetalsurfaceforafterinitialkineticenergy
Phototubesnormalwork,anodepotentialthanthecathode,showninfigure2.Inoneshotmorethan"redlightfrequencyispremise,escapefromtheoptoelectroniccathodesurfacebypositivepotentialattractedtheanodeinphotoelectrictubeformingspace,calledthecurrentstream.Theniflightintensityincreases,thenumberofphotonsbombardedthecathodemultiplied,unitoftimetolaunchphotoelectronnumberarealsoincreasing,photo-currentgreatens.Infigure2showscircuit,currentandresistanceisthevoltagedropacrosstheonlyafunctionoflightintensityrelations,soastoachieveaphotoelectricconversion.WhentheLTToptoelectroniccathodeK,electronicescapefromthecathodesurface,andwasthephotoelectricanodeisanelectriccurrent,powerplantsabsorbdeoxidizationdeviceintheloadresistance-I,thevoltage
Phototubesphotoelectriccharacteristicsfig.03shows,fromthegraphinfluxknowable,nottoobig,photoelectricbasiccharacteristicsisastraightline.
2.Photoelectrictimeshadthesensitivityofvacuumtubeduetolow,sowithpeopledevelopedhasmagnifiedthephotomultipliertubesphoto-currentability.Figure4isphotomultipliertubestructureschematicdrawing.
图4光电倍增构造示意图
FromthegraphcanseephotomultipliertubesalsohaveAcathodeKandananodeA,andphototubesdifferentisinitsbetweenanodeandcathodesetupseveralsecondaryemissionelectrodes,D1,D2andD3...Theycalledthefirstmultiplyelectrode,thesecondmultiplyelectrode,...Usually,doubleelectrodefor10~15levels.Photomultipliertubesworkbetweenadjacentelectrode,keepingacertainminimum,includingthecathodepotentialpotentials,eachmultiplyelectrodepotentialfilteringincreases,theanodepotentialsupreme.Whentheincidentlightirradiation,cathodicKescapefromtheoptoelectroniccathodemultipliedbyfirstaccelerated,byhighspeedelectrodeD1bombardedcausedsecondaryelectronemission,D1,anincidentcangeneratemultiplesecondaryelectronphotonics,D1emitofsecondaryelectronwasD1,D2askedelectricfieldacceleration,convergedonD2andagainproducesecondaryelectronemission...Sograduallyproducesecondaryelectronemission,makeelectronicincreasedrapidly,theseelectronicfinallyarrivedattheanode,formalargeranodecurrent.Ifanlevel,multiplyelectrodesatalllevelsforsigma,themultiplicationofrateisthemultiplicationofphotomultipliertubescanbeconsideredsigmanrate,therefore,photomultipliertubehashighsensitivity.Intheoutputcurrentislessthan1mAcircumstances,itinaverywidephotoelectricpropertieswithinthescopeofthelinearrelationshipwithgood.Photomultipliertubesthischaracteristic,makeitmoreforlightmeasurement.
3andphotoconductiveresistancephotoconductiveresistancewithintheworkingprincipleisbasedonthephotoelectriceffect.Insemiconductorphotosensitivematerialendsofmountelectrodelead,itcontainstransparentwindowsealedinthetubeandshellelementphotoconductiveresistance.Photoconductiveresistancepropertiesandparametersare:
1)darkresistancephotoconductiveresistanceatroomtemperature,totaldarkconditionsstableresistancecalleddarkresistance,atthecurrentflowresistanceiscalleddarkcurrent.
2)lightresistancephotoconductiveresistanceatroomtemperatureandcertainlightingconditionsstableresistancemeasured,rightnowiscalledlightresistanceofcurrentflowresistanceiscalledlightcurrent.
4,volt-amperecharacteristicsofbothendsphotoconductiveresistanceaddedvoltageandcurrentflowsthroughphotoconductiveresistanceoftherelationshipbetweencalledvolt-amperecharacteristicsshown,asshowninfigure5.Fromthegraph,theapproximatelinearvolt-amperecharacteristicsthatuseshouldbelimited,butwhenthevoltageendsphotoconductiveresistance,lestthanshowndottedlinesofpowerconsumptionarea
5,photoelectriccharacteristicsphotoconductiveresistancebetweenthepoles,lightwhenvoltagefixedtherelationshipbetweenwithbrightcurrentphotoelectriccharacteristics.CalledPhotoconductiveresistancephotoelectriccharacteristicsisnonlinear,thisisoneofthemajordrawbackofphotoconductiveresistance.
6,spectralcharacteristicsisnotthesameincidentwavelength,thesensitivityofphotoconductiveresistanceisdifferentalso.Incidencewavelengthandphotodetectortherelationshipbetweenrelativesensitivitycalledspectralcharacteristics.Whenusedaccordingtothewavelengthrangebymetering,choosedifferentmaterialphotoconductiveresistance.
7,responsetimebyphotoconductiveresistanceafterphoto-currentneedlight,overaperiodoftime(time)risetoreachitssteadyvalue.Similarly,instoplightphoto-currentalsoneed,overaperiodoftime(downtime)tor
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