Studyondevicesimulati省略iconthinfilmsolcaj.docx
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Studyondevicesimulati省略iconthinfilmsolcaj
SCIENCECHINA
TechnologicalSciences
©ScienceChinaPressandSpringer-VerlagBerlinHeidelberg2012
*Correspondingauthor(email:
stsab@)
•RESEARCHPAPER•November2012Vol.55No.11:
3187–3199
doi:
10.1007/s11431-012-5004-5
Studyondevicesimulationandperformanceoptimizationof
theepitaxialcrystallinesiliconthinfilmsolarcell
AIBin*,ZHANGYongHui,DENGYouJun&SHENHui
GuangdongProvincialKeyLaboratoryofPhotovoltaicTechnologies,StateKeyLaboratoryofOptoelectronicMaterialsandTechnologies,
SunYat-senUniversity,Guangzhou510006,China
ReceivedAugust3,2011;acceptedJune18,2012;publishedonlineAugust27,2012
Becausecrystallinesiliconthinfilm(CSiTF)solarcellspossesstheadvantagesofcrystallinesiliconsolarcellssuchashighefficiency
andstableperformanceandthoseofthinfilmsolarcellssuchaslowcostandsoon,itisregardedasthenextgeneration
solarcelltechnology,whichismostlikelytoreplacetheexistingcrystallinesiliconsolarcelltechnology.Inthispaper,we
performeddevicesimulationontheepitaxialCSiTFsolarcellbyusingPC1Dsoftware.Inordertomakesimulationresults
closertotheactualsituation,weadoptedamorerealisticdevicestructureandparameters.Onthisbasis,wecomprehensively
andsystematicallyinvestigatedtheeffectofphysicalparametersofbacksurfacefield(BSF)layer,baseandemitter,electrical
qualityofcrystallinesiliconactivelayer,situationofsurfacepassivation,internalrecombinationandp-njunctionleakageon
theoptoelectronicperformanceoftheepitaxialCSiTFsolarcell.Amongvariousfactorsaffectingtheefficiencyoftheepitaxial
CSiTFsolarcell,weidentifiedthethreelargestefficiency-affectingparameters.Theyarethebaseminoritycarrierdiffusion
length,thediodedarksaturationcurrentandthefrontsurfacerecombinationvelocityinorder.Throughsimulations,wefound
thatthebaseisnotthethickerthebetter,andthebaseminoritycarrierdiffusionlengthmustbetakenintoaccountwhendetermining
theoptimalbasethickness.Whenthebaseminoritycarrierdiffusionlengthissmaller,theoptimalbasethickness
shouldbelessthanorequaltothebaseminoritycarrierdiffusionlength;whenthebaseminoritycarrierdiffusionlengthis
larger,thebaseminoritycarrierdiffusionlengthshouldbeatleasttwicetheoptimalbasethickness.Inaddition,thispapernot
onlyillustratesthesimulationresultsbutalsoexplainstheirchangesfromtheaspectofphysicalmechanisms.Becauseepitaxial
CSiTFsolarcellspossessadevicestructurethatissimilartocrystallinesiliconsolarcells,theconclusionsdrawninthispaper
arealsoappliedtocrystallinesiliconsolarcellstoacertainextent,particularlytothinsiliconsolarcellswhicharethehottest
researchtopicatpresent.
solarcell,crystallinesiliconthinfilmsolarcells,devicesimulation,PC1Dsimulation
Citation:
AiB,ZhangYH,DengYJ,etal.Studyondevicesimulationandperformanceoptimizationoftheepitaxialcrystallinesiliconthinfilmsolarcell.
SciChinaTechSci,2012,55:
31873199,doi:
10.1007/s11431-012-5004-5
Asdevicesimulationhasgreatadvantagesofsignificantly
cuttingtheresearchanddevelopment(R&D)costand
dramaticallyshorteningtheR&Dperiod,ithasbecomean
indispensabletechniqueindevelopingnewtypesolarcells.
Withrapiddevelopmentofcomputertechnologies,thedevice
simulationisdevelopingtowardsthedirectionoffull
sizesimulationonasolarcellinrecentyears.Asfaras
threedimensional(3D)numericalsimulationonasolarcell
isconcerned,onehastocombinetheuseofopticalsimulation
software(likeSunrays),3Dsemiconductordevicesimulation
software(suchasSentaurus)andcircuitsimulation
software(suchasPspice)toachievethisgoal[1].Specifically
speaking,usetheopticalsimulationsoftwaretosimulate
thelightabsorptionandsurfacereflectancecurveofthe
solarcell;usethe3Ddevicesimulationsoftwaretosimulate
3188AiB,etal.SciChinaTechSciNovember(2012)Vol.55No.11
theI-Vcharacteristiccurveofthesolarcell;usethecircuit
simulationsoftwaretosimulatetheohmiclossescausedby
thegridlineelectrodeandtheI-Voutputcharacteristicsof
thesolarcellasawhole.
Sincethe3Dnumericalsimulationneedsusingmultiple
softwareandspecialserver,itleadstoveryhighsimulation
cost,fairlycomplexsimulationprocess,andverylarge
workload.Currently,fewpeopleareengagedintheresearch
ofthe3Dnumericalsimulationonsolarcellsintheworld,
mostresearchersstillperformdeviceoptimizationbyusing
1Ddevicesimulationsoftware(suchasPC1D)[2–8].Actually,
anysolarcellsare3Ddevices,strictlyspeaking,1D
simulationsoftwarecanonlypreciselysimulatetheperformance
ofsolarcellswithplanestructure,whichmeansthat
thephysicalpropertiesonlychangeinonedirection.However,
iftheeffectsresultedfrom3Ddevicestructurecanbe
neglected,thenthedevicecanobviouslybesimulatedby
usingthe1Dsimulationsoftware.Infact,evenifthe3D
effectscannotbeneglected,onecanalsoperformdevice
simulationwiththe1Dsimulationsoftwarebyusingthe
conversionorapproximationmethodssuchas“equivalent
devicestructure”and“effectiveparameters”method[4–6].
PC1Dmightbethemostfamousandcommonly-used1D
simulationsoftwareforsolarcells[7–9].Originally,itwasa
computerapplicationprogramcompatiblewithIBMpersonal
computer,usingthefiniteelementmethodtosolvea
setofthefullycouplednonlinearequationsfordescribing
thequasi-one-dimensionaltransportofelectronsandholes
inaphotovoltaicdevice.Duringthe20yearsdevelopment,
especiallywiththehelpofsimulationstudyonhigh-efficiency
singlecrystallinesiliconsolarcells,ithasestablished
asetofwell-developedphysicalmodelsandalgorithms
[9–13].Forthisreason,PC1Dcanpredicttheperformances
ofcrystallinesiliconsolarcellswithveryhighaccuracy,
whichcannotbeattainedbyotherphotovoltaicdevicesimulation
software.
Becausecrystallinesiliconthinfilm(CSiTF)solarcells
possesstheadvantagesofcrystallinesiliconsolarcells
(high-efficiency,long-life,stable-performance,richand
non-toxicmaterials,etc.)andthoseofthinfilmsolarcells
(lowcost,whichisexpectedtoonlyhave1/5to1/2ofthe
costsofcrystallinesiliconsolarcells),ithasbeenahotresearch
topicforphotovoltaicspecialistsallovertheworldin
thepastdecade[14–21].AmongvariousCSiTFsolarcell
conceptspursued,theepitaxialCSiTFsolarcelldirectly
fabricatedonlowcost,heavilydopedcrystallinesilicon
substrate(e.g.,SSPribbon)maybethesimplestCSiTFsolar
celltechnology.Owingtothesimplicityofdevicestructure
andcompatibilitywiththetraditionalcrystallinesilicon
solarcelltechnology,theepitaxialCSiTFsolarcellonlow
costcrystallinesiliconsubstrateisworthytobestudied
fromtheviewofeconomy[19–21].
Faller[20]firstappliedPC1Dtooptimizationdesignof
anepitaxialCSiTFsolarcell,andlaidemphasisoninvestigating
therelationshipbetweentheconversionefficiency
andthebasethickness,thebasedopingconcentrationand
thebaseminoritycarrierdiffusionlength.However,too
idealparameterswereset(e.g.,assumingthattherecombination
velocityofinterfacebetweensubstrateandBSFlayer
isonly500cm/s,etc.),whichresultedindeteriorationof
reliabilityofthesimulationresults.Accordingtothesimulation
results,whenthebaseminoritycarrierdiffusion
lengthismuchlarger(20m),theCSiTFsolarcellswith
only2mthickactivelayercanachieveanefficiencyof
13%.Obviously,thissimulationresultisfairlyunreasonable
foraCSiTFsolarcellwithoutanylighttrappingstructure
onthebackside.Later,Li[22]alsostudiedtheoptimal
designofanepitaxialCSiTFsolarcellanddiscussedthe
effectsofthemajorefficiency-limitingfactorsbyusing
PC1D,butthedevicestructureconsideredwastoosimple,
onlycomposedofacrystallinesiliconsubstrateandanactive
layer(consistingofbaseandemitter).Inaddition,there
alsoexistedtheproblemoftooidealparametersetting,for
example,theseriesresistancewasassumedtobezero,the
parallelresistancewasinfiniteandthediodedarksaturation
currentwaszero.However,accordingtoourexperimental
results[21],toohighI0(thediodedarksaturationcurrent)
andtoolowRsh(theparallelresistance)arethemainfactors
deterioratingtheperformancesofas-preparedepitaxial
CSiTFsolarcells.
Tosolvetheproblemsexistinginthepreviousresearch,
inthispaperPC1DsimulationonanepitaxialCSiTFsolar
cellwascarriedoutbyusingthedevicestructureandparameters
closertotheactualsituation.Onthisbasis,each
functionallayersofthedevicewereoptimizedsystematically.
Furthermore,wealsostudiedtheeffectsofthebase
minoritycarrierdiffusionlength,thesurfacerecombination
velocity,theparallelresistanceandthediodedarksaturation
currentontheconversionefficiency.Inordertoreflect
theimpactofmultiplesimultaneously-changingparameters
ontheefficiency,wepresentedthefour-parameter-diagrams
(thecontourmapsoftheefficiencyasafunctionofother
threeparameters).
1IntroductiontoPC1Dsimulation
1.1AdvantagesanddisadvantagesofPC1Dsimulation
PC1Dsimulationpossessesthefollowingadvantages[9–13]:
(i)PC1Dcanrunonanordinarypersonalcomputeraslong
astheCPUhasthebuilt-inmathcoprocessor,withoutthe
needofusingadedicatedserver.PC1D5.0versionisa
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