器件仿真比较标准的Word格式文档下载.docx
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器件仿真比较标准的Word格式文档下载.docx
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Y.MESHDEPTH=1.0H1=0.250
COMMENTEliminatesomeunnecessarysubstratenodes
ELIMINCOLUMNSY.MIN=1.1
COMMENTIncreasesource/drainoxidethicknessusingSPREAD
SPREADLEFTWIDTH=.625UP=1LO=3THICK=.1ENC=2
SPREADRIGHTWIDTH=.625UP=1LO=3THICK=.1ENC=2
COMMENTUseSPREADagaintopreventsubstrategriddistortion
SPREADLEFTWIDTH=100UP=3LO=4Y.LO=0.125
COMMENTSpecifyoxideandsiliconregions
REGIONSILICON
REGIONOXIDEIY.MAX=3
COMMENTElectrodedefinition
ELECTRNAME=GateX.MIN=0.625X.MAX=2.375TOP
ELECTRNAME=SubstrateBOTTOM
ELECTRNAME=SourceX.MAX=0.5IY.MAX=3
ELECTRNAME=DrainX.MIN=2.5IY.MAX=3
COMMENTSpecifyimpurityprofilesandfixedcharge
PROFILEP-TYPEN.PEAK=3E15UNIFORM
PROFILEP-TYPEN.PEAK=2E16Y.CHAR=.25
PROFILEN-TYPEN.PEAK=2E20Y.JUNC=.34X.MIN=0.0WIDTH=.5
+XY.RAT=.75
PROFILEN-TYPEN.PEAK=2E20Y.JUNC=.34X.MIN=2.5WIDTH=.5
INTERFACQF=1E10
PLOT.2DGRIDTITLE="
2940710325-InitialGrid"
FILLSCALE
COMMENTRegridondoping
REGRIDDOPINGLOGIGNORE=OXIDERATIO=2SMOOTH=1
2940710325-DopingRegrid"
实验图形:
(2)、电势分布加密网格程序:
COMMENTSpecifycontactparameters
CONTACTNAME=GateN.POLY
COMMENTSpecifyphysicalmodelstouse
MODELSCONMOBFLDMOBSRFMOB2
COMMENTSymbolicfactorization,solve,regridonpotential
SYMBCARRIERS=0
METHODICCGDAMPED
SOLVE
REGRIDPOTENIGNORE=OXIDERATIO=.2MAX=1SMOOTH=1
2940710325-PotentialRegrid"
阈值电压仿真程序:
SYMBNEWTONCARRIERS=1ELECTRO
SOLVEV(Drain)=.1
SOLVEV(Gate)=.2ELEC=GateVSTEP=.2NSTEP=9
PLOT.1DY.AXIS=I(Drain)X.AXIS=V(Gate)POINTSCOLOR=2
+TITLE=“2940710325-GateCharacteristics"
LABELLABEL="
Vds=0.1v"
X=1.6Y=0.7E-6
阈值电压图形;
从图中可知,该nmos的阈值电压为0.24v
二次击穿程序:
MODELSIMPACT.I
LOOPSTEPS=2
ASSIGNNAME=SUBN.VALUE=(0,2e5)
ASSIGNNAME=OLOGC1="
a"
C2="
b"
LOGOUT.FILE=@OLOG
CONTACTNAME=SubstrateRESIST=@SUB
SYMBCARRIERS=2NEWTON
SOLVEV(Gate)=0.5V(Drain)=9.0LOCAL
SOLVEELEC=DrainCONTINUC.VMAX=15C.IMAX=0.8E-4
+C.VSTEP=0.55C.TOLER=0.10
L.END
PLOT.1Din.file=aX.AXIS=V(Drain)Y.AXIS=I(Drain)POINTSCOLOR=2^ORDER
+LEFT=8.5RIGHT=15BOT=0.0TOP=1.0E-4
+TITLE="
2940710325DrainCurrentSnapback"
PLOT.1Din.file=bX.AXIS=V(Drain)Y.AXIS=I(Drain)POINTSCOLOR=3^ORDER
+unchange
Vgs=0.5v"
X=10.7Y=0.9E-4
VRESIST=0"
X=10.7Y=0.7E-4COLOR=2
VRESIST=2e5"
X=10.7Y=0.5E-4COLOR=3
二次击穿图形:
表面电势程序:
MESHIN.FILE=MESH
LOADIN.FILE=FULL
INTERFACCLEAR
SOLVEV(Drain)=0.1
LOOPSTEPS=3
ASSIGNNAME=NDONN.VALUE=(0.0,5E11,0.0)
ASSIGNNAME=NACCN.VALUE=(0.0,0.0,5E11)
ASSIGNNAME=fileC1="
C3="
c"
INTERFACN.DON=@NDONN.ACC=@NACC
SOLVEV(Gate)=-0.6OUT.FILE=@file"
1"
SOLVEV(Gate)=2.0OUT.FILE=@file"
2"
ASSIGNNAME=TITLEC1="
ZeroCharge"
PositiveStates"
NegativeStates"
ASSIGNNAME=NUMN.VALUE=(1,2)
ASSIGNNAME=XOFFN.VALUE=(2.0,11.0)
ASSIGNNAME=CLEARL.VALUE=(T,F)
ASSIGNNAME=BIASC1="
Vg=-0.6v"
Vg=2.0v"
LOADIN.FILE=@file@NUM
IFCOND=@CLEAR
PLOT.1DCONDUCCOL=4BOT=2TOP=-2X.LEN=7X.OFF=@XOFF
+X.ST=1.5X.EN=1.5Y.ST=0Y.EN=0.5TITLE=@TITLE"
0325"
ELSE
+^CLEAR
IF.END
PLOT.1DVALENCCOL=4UNCHANGEX.LEN=7X.OFF=@XOFF
+X.ST=1.5X.EN=1.5Y.ST=0Y.EN=0.5
PLOT.1DPOTENCOL=3UNCHANGEX.LEN=7X.OFF=@XOFF
PLOT.1DQFNCOL=2UNCHANGEX.LEN=7X.OFF=@XOFFLINE=2
LABELLABEL=@BIAS
LABELLABEL=ConductionX=.33Y=-0.95C.SI=.2
LABELLABEL=PotentialX=.33Y=-0.40C.SI=.2
LABELLABEL=QfnX=.33Y=-0.05C.SI=.2
LABELLABEL=ValenceX=.33Y=0.35C.SI=.2
表面电荷图形;
五、实验总结:
1、掌握了MEDICI的基本功能和使用方法;
2、清楚的了解并知道NMOS的一些特性以及结构等;
3、学回来自己用MEDICI软件进行其他器件的仿真;
实验二:
NPN器件仿真
3、掌握NPN的结构,并获得NPN的器件结构图;
器件仿真实际上就是利用数值方法,根据一定的边界条件求解器件的基本方程,器件的基本方程包括泊松方程、电子和空穴连续性方程、热扩散方程、电子电流和空穴电流的飘移扩散方程、能量运输方程,求解基本量包括电势、电子浓度、空穴浓度、晶格温度等;
5、关闭实验用的软件;
NPN的结构实验程序;
TITLETMAMEDICI2940710325huanglin
COMMENTSimulationwithModifiedEmitterRegion
COMMENTInitialmeshspecification
MESH
X.MESHWIDTH=6.0H1=0.250
Y.MESHY.MIN=-0.25Y.MAX=0.0N.SPACES=2
Y.MESHDEPTH=0.5H1=0.125
Y.MESHDEPTH=1.5H1=0.125H2=0.4
COMMENTRegiondefinition
REGIONNAME=SiliconSILICON
REGIONNAME=OxideOXIDEY.MAX=0
REGIONNAME=PolyPOLYSILIY.MAX=0X.MIN=2.75X.MAX=4.25
COMMENTElectrodes
ELECTRNAME=BaseX.MIN=1.25X.MAX=2.00Y.MAX=0.0
ELECTRNAME=EmitterX.MIN=2.75X.MAX=4.25TOP
ELECTRNAME=CollectorBOTTOM
COMMENTSpecifyimpurityprofiles
PROFILEN-TYPEN.PEAK=5e15UNIFORMOUT.FILE=MDEX2DS
PROFILEP-TYPEN.PEAK=6e17Y.MIN=0.35Y.CHAR=0.16
+X.MIN=1.25WIDTH=3.5XY.RAT=0.75
PROFILEP-TYPEN.PEAK=4e18Y.MIN=0.0Y.CHAR=0.16
PROFILEN-TYPEN.PEAK=7e19Y.MIN=-0.25DEPTH=0.25Y.CHAR=0.17
+X.MIN=2.75WIDTH=1.5XY.RAT=0.75
PROFILEN-TYPEN.PEAK=1e19Y.MIN=2.0Y.CHAR=0.27
COMMENTRegridsondoping
PLOT.2DGRIDSCALEFILL
REGRIDDOPINGLOGRATIO=3SMOOTH=1IN.FILE=MDEX2DS
COMMENTExtraregridinemitter-basejunctionregiononly.
+X.MIN=2.25X.MAX=4.75Y.MAX=0.50OUT.FILE=MDEX2MP
NPN结构图:
1、掌握了MEDICI的使用方法和基本;
2、掌握了NPN的结构特型以及结构图形;
实验三:
SOI结构
3、掌握SOI的结构,并获得SOI的器件结构图,掺杂分布,电势分布,I-V特性曲线、瞬态;
Medici是一个用来二维器件模拟的软件,它对势能场和载流子的二维分布建模,通过解泊松方程和电子、空穴的电流连续性等方程来获得特定的电学特性。
5、编写文件查看掺杂再分布,电势分布图像;
6、编写文件查看I-V特性曲线及瞬态曲线;
7、关闭实验用的软件;
1、SOI结构仿真程序:
MESHSMOOTH=1
X.MESHWIDTH=18H1=0.5
Y.MESHN=1L=-0.04
Y.MESHN=3L=0
Y.MESHDEPTH=0.8H1=0.1
Y.MESHDEPTH=2.8H1=1
Y.MESHDEPTH=1H1=0.5
Y.MESHDEPTH=5H1=1
ELIMINCOLUMNSY.MIN=1.1
REGIONSILICON
REGIONOXIDEIY.MAX=3
REGIONOXIDEY.MIN=3.6Y.MAX=4.6
ELECTRNAME=GateX.MIN=9X.MAX=13TOP
ELECTRNAME=SubstrateBOTTOM
ELECTRNAME=SourceX.MIN=2X.MAX=8IY.MAX=3
ELECTRNAME=DrainX.MIN=14X.MAX=16IY.MAX=3
PROFILEN-TYPEN.PEAK=1E16Y.MIN=4.6Y.MAX=9.6UNIFORM
PROFILEN-TYPEN.PEAK=5E15Y.MIN=0Y.MAX=3.6UNIFORM
PROFILEP-TYPEN.PEAK=5E19X.MIN=6X.MAX=9Y.JUNC=0.6XY.RAT=.75
PROFILEP-TYPEN.PEAK=5E19X.MIN=13X.MAX=17Y.JUNC=0.6XY.RAT=.75
PROFILEN-TYPEN.PEAK=1E20Y.JUNC=0.6X.MIN=1WIDTH=3XY.RAT=.75
2940710325SOIMESH"
FILL
结构图形:
掺杂再分布程序:
REGRIDDOPINGLOGIGNORE=OXIDERATIO=2SMOOTH=1
2940710325DopingRegrid"
掺杂再分布图形:
电势分布程序:
CONTACTNAME=GateN.POLY
MODELSCONMOBFLDMOBSRFMOB2
SYMBCARRIERS=0
METHODICCGDAMPED
SOLVE
REGRIDPOTENIGNORE=OXIDERATIO=.2MAX=1SMOOTH=1
2940710325PotentialRegrid"
FILL
电势分布图形:
2、I-V特性曲线仿真
在VS=0V,Vsub=0V,VG=-3V,VD=0~5V条件下仿真,其程序为:
SOLVEV(drain)=-3V(gate)=0local
SYMBNEWTONCARRIERS=1HOLES
SOLVEV(Gate)=-3RAMPTIME=1E-6TSTEP=1E-18TSTOP=3E-6
PLOT.1DY.AXIS=I(drain)X.AXIS=TIMEPOINTSCOLOR=2TITLE="
I-V特性曲线图形:
3、瞬态仿真
初始条件为:
VS=0V,Vsub=0V,VG=0V,VD=-3V,将VG由0V变到-3V,仿真程序为:
SOLVEV(Gate)=-3RAMPTIME=1E-6
+TSTEP=1E-18TSTOP=3E-6
MESHIN.FILE=002
LOADIN.FILE=003
SOLVEV(drain)=-3V(gate)=0
2940710325"
瞬态曲线:
可以看到器件由截止到导通需要的时间约为:
1e-6s;
1、掌握了MEDICI的使用方法以及基本功能;
2、清楚的明白的掌握了SOI的各种基本特性;
实验四:
器件和电路的结合仿真
3、掌握器件和电路的结合仿真,并查看结合仿真的图形;
5、编写文件查看输入输出电压对比;
6、编写文件查看输入电流与电压的关系;
7、编写文件查看PMOS、NMOS的电势分布图形;
(一)NPN连入电路中
NPN程序:
TITLE2940710325-BJTwithSeriesResistance
COMMENTGetdefaultvalues
CALLFILE=bipdef0^PRINT
COMMENTSelectanNPNdevice
ASSIGNNAME=TRANTYPEC.VALUE=NPN
COMMENTAssignsomenewvaluesforthedopingprofiles
ASSIGNNAME=EPEAKN.VALUE=1.5e20
ASSIGNNAME=XBPEAKN.VALUE=1e18
COMMENTCreatethemeshfileusingthetemplate"
bipstr0"
CALLFILE=bipstr0^PRINT
COMMENTSpecifysomephysicalmodels
MODELSCONMOBCONSRHAUGERBGN
COMMENTSavethemeshfile
SAVEOUT.FILE=MDE11MSMESHW.MODELS
COMMENTEnterCIRCUITmode
STARTCIRCUIT
$Powersource
VDD105
$Collectorresistance
RC121K
$Basebias
IB030.01m
$Baseresistance
RB34100
RE5020
$Emitterresistance
$
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