DLTS深能级瞬态谱Word下载.docx
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DLTS深能级瞬态谱Word下载.docx
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<
1K
或1%
∙测试电容:
1~10000pF
∙电容灵敏度:
2*10-5pF
∙相角稳定性:
0.001°
∙检测灵敏度:
1010atoms/cm3
应用领域
∙检测Si、ZnO、GaN等半导体材料中微量杂质、缺陷的深能级及界面态
产品型号:
DLTS
参考价格:
面议
厂商性质:
一般经销商
产
地:
美国
3I指数:
404
仪器简介:
美国高分辨深能级瞬态谱仪是半导体领域研究和检测半导体杂质、缺陷深能级、界面态等的重要技术手段!
测试功能:
电容模式、定电容模式、电流模式、(双关联模式)、光激发模式、FET分析、MOS分析、等温瞬态谱、Trapprofiling、俘获截面测量、I/V,I/V(T)、C/V,C/V(T)、TSC/TSCAP、光子诱导瞬态谱、DLOS;
测试根据半导体P-N结、金-半接触结构肖特基结的瞬态电容(△C~t)技术和深能级瞬态谱的发射率窗技术测量出的深能级瞬态谱,是一种具有很高检测灵敏度的实验方法,能检测半导体中微量杂质、缺陷的深能级及界面态。
通过对样品的温度扫描,给出表征半导体禁带范围内的杂质、缺陷深能级及界面态随温度(即能量)分布的DLTS谱,集成多种全自动的测量模式及全面的数据分析,可以确定杂质的类型、含量以及随深度的分布。
也可用于光伏太阳能电池领域中,分析少子寿命和转化效率衰减的关键性杂质元素和杂质元素的晶格占位,确定是何种掺杂元素和何种元素占位影响少子寿命。
感谢中国科学院宁波材料研究所,国家硅材料深加工产品质量监督检验中心成为此设备的专业用户!
!
此设备在全球用户众多,比欧洲设备性能价格比高,是研究材料深能级领域的理想工具!
系统配置:
DLTS数据采集及分析软件
(DLTS,ODLTS,DDLTS)
Boonton7200型快速电容测试器
自动电容零点界面
数据采集卡及中断箱
ODLTS穿导件
机柜安装硬件及电缆
设备机柜
GPIB接口卡
电脑是双核,2GB内存,19”显示器.USB接口,CD书写用于数据传输.
可调节探针
(2)
闭环液氦制冷机(25-700K)
温度控制器
电容测试器指标:
型号:
Boonton7200
电容零点界面:
Yes
全自动电容补偿:
全自动范围设置:
响应时间:
~25μsec
补偿范围:
256pF
测试频率:
1MHz
测试信号级别:
15,30,50,100mV
电容范围:
2000pF
灵敏度:
1fF
电压范围:
+100Vto–100V(Boonton)
+10Vto–10V(数据采集卡)
1mV(电压小于20V时),10mV(电压大于20V时)
0.3mV(数据采集卡)
脉冲宽度:
15msto>
0.1sec(Boonton内置偏压)
5μsto>
0.1sec(数据采集卡)
脉冲幅度:
到200V,slewrate<
20V/ms(Boonton)
到20V,slewrateof20V/μs(数据采集卡)
电流:
5mA
数据采集卡瞬时记录:
采样速率:
可至1μs.一般使用>
50μs
采样次数:
>
10,000.
记录分辨率:
50ns暂时分辨率,优于50aF电容分辨率
过滤:
全自动检测及正弦噪音消除
DeepLevelTransientSpectroscopy(DLTS)isapowerfultoolforthestudyofelectricallyactivedefects(knownastraps)insemiconductors,duetocontamination.
DLTSisadestructivetechnique,asitrequiresformingeitheraSchottkydiodeorap-njunctionwithasmallsample,usuallycutfromacompletewafer.
Majoritycarriertrapsareobservedbytheapplicationofareversebiaspulse,whileminoritycarriertrapscanbeobservedbytheapplicationofaforwardbiaspulse.
Thetechniqueworksbyobservingthecapacitancetransientassociatedwiththechangeindepletionregionwidthasthediodereturnstoequilibriumfromaninitialnon-equilibriumstate.
Thecapacitancetransientismeasuredasafunctionoftemperature(usuallyintherangefrom30º
Ktoroomtemperature300º
Korabove).
Byusingalock-inaveragingtechnique,peaksataparticularemissionratearefoundasafunctionoftemperature.
Bylookingforemissionsatdifferentfrequenciesandmonitoringthetemperatureoftheassociatedpeak,anArrheniusplotallowsforthedeductionofatrap'
sactivationenergy.
Byvaryingthepulsewidth,itispossibletodeterminethecapturecrosssectionprecisely.
Semilab’sDLTSsystemiscomposedoftheDLS-83DorDLS-1000andoneofthefourcryostatsSemilaboffers.
DLS-83D四川大学材料科学工程37.35w2005
TheDLS-83Doffersafullyautomaticmeasurementmodeaswellasprovidingcompleteinterpretationofthemeasureddata,includingimpurityidentificationandconcentrationdeterminationwithoutanyneedforuserinteraction.
Thedeepleveltransientspectroscopy(DLTS)isthebesttechniqueformonitoringandcharacterizingdeeplevelscausedbyintentionallyorunintentionallyintroducedimpuritiesanddefectsinsemiconductormaterialsandcompletedevices.Itisanextremelyversatilemethodfordeterminingallparametersassociatedwithdeeptrapsincludingenergylevel,capturecrosssectionandconcentrationdistribution.Itpermitsidentificationoftheimpuritiesandiscapableofdetectingcontaminationconcentrationsbelow109atoms/cm3.
KeyFeatures:
∙Highestsensitivity(109atoms/cm3)fordetectionoftracelevelsofcontamination
∙Interfacingtoabroadrangeofcryostats
∙Widerangeofmeasurementmodes:
otemperaturescan
ofrequencyscan
odepthprofiling
oC-Vcharacterization
ocapturecrosssectionmeasurement
oopticalinjection
oconstantcapacitancefeedbackloop
oconductancetransientmeasurements
oMOSinterfacestatedensitydistribution
∙controlledbydigitalandanalogsettingstoallowrealeaseofoperation
∙samplequalitytestbyI-V,C-V
∙fullcomputercontrolwithextensivesoftwaresupport,completelibrarydatabaseforaccuratecontaminationidentification
Applications:
SolutionsforR&
D
DLTSFromWikipedia
Deep-leveltransientspectroscopy
FromWikipedia,thefreeencyclopedia
DeepLevelTransientSpectroscopy(DLTS)isanexperimentaltoolforstudyingelectricallyactivedefects(knownaschargecarriertraps)insemiconductors.DLTSestablishesfundamentaldefectparametersandmeasurestheirconcentrationinthematerial.Someoftheparametersareconsideredasdefect“fingerprints”usedfortheiridentificationsandanalysis.
DLTSinvestigatesdefectspresentinaspacecharge(depletion)regionofasimpleelectronicdevice.ThemostcommonlyusedareSchottkydiodesorp-njunctions.Inthemeasurementprocessthesteady-statediodereversepolarizationvoltageisdisturbedbyavoltagepulse.Thisvoltagepulsereducestheelectricfieldinthespacechargeregionandallowsfreecarriersfromthesemiconductorbulktopenetratethisregionandrechargethedefectscausingtheirnon-equilibriumchargestate.Afterthepulse,whenthevoltagereturnstoitssteady-statevalue,thedefectsstarttoemittrappedcarriersduetothethermalemissionprocess.Thetechniqueobservesthedevicespacechargeregioncapacitancewherethedefectchargestaterecoverycausesthecapacitancetransient.Thevoltagepulsefollowedbythedefectchargestaterecoveryarecycledallowinganapplicationofdifferentsignalprocessingmethodsfordefectrechargingprocessanalysis.
TheDLTStechniquehasahighersensitivitythanalmostanyothersemiconductordiagnostictechnique.Forexample,insiliconitcandetectimpuritiesanddefectsataconcentrationofonepartin1012ofthematerialhostatoms.Thisfeaturetogetherwithatechnicalsimplicityofitsdesignmadeitverypopularinresearchlabsandsemiconductormaterialproductionfactories.
TheDLTStechniquewaspioneeredbyD.V.Lang(DavidVernLangofBellLaboratories)in1974.[1]USPatent[2]wasawardedtoLangin1975.
Contents
[hide]
∙1DLTSmethods
o1.1ConventionalDLTS
o1.2MCTSandminority-carrierDLTS
o1.3LaplaceDLTS
o1.4Constant-CapacitanceDLTS
o1.5I-DLTSandPITS
∙2Seealso
∙3References
∙4Externallinks
[edit]DLTSmethods
[edit]ConventionalDLTS
TypicalconventionalDLTSspectra
InconventionalDLTSthecapacitancetransientsareinvestigatedbyusingalock-inamplifierordoublebox-caraveragingtechniquewhenthesampletemperatureisslowlyvaried(usuallyinarangefromliquidnitrogentemperaturetoroomtemperature300Korabove).Theequipmentreferencefrequencyisthevoltagepulserepetitionrate.IntheconventionalDLTSmethodthisfrequencymultipliedbysomeconstant(dependingonthehardwareused)iscalledthe“ratewindow”.Whenduringthesampletemperaturevariationtheemissionrateofcarriersfromsomedefectequalstotheratewindowoneobtainsinthespectrumapeak.BysettingupdifferentratewindowsinsubsequentDLTSspectrameasurementsoneobtainsdifferenttemperaturesatwhichsomeparticularpeakappears.HavingasetoftheemissionrateandcorrespondingtemperaturepairsonecanmakeanArrheniusplotwhichallowsforthedeductionofdefectactivationenergyforthethermalemissionprocess.Usuallythisenergy(sometimescalledthedefectenergylevel)togetherwiththeplotinterseptvaluearedefectparametersusedforitsidentificationoranalysis.
Recently,DLTShasbeenusedtostudyquantumdots.[3][4][5]
[edit]MCTSandminority-carrierDLTS
FortheSchottkydiodes,majoritycarriertrapsareobservedbytheapplicationofareversebiaspulse,whileminoritycarriertrapscanbeobservedwhenthereversebiasvoltagepulsesarereplacedwithlightpulseswiththephotonenergyfromtheabovesemiconductorbandgapspectralrange.[6][7]ThismethodiscalledMinorityCarrierTransientSpectroscopy(MCTS).Theminoritycarriertrapscanbealsoobservedforthep-njunctionsbyapplicationofforwardbiaspulseswhichinjectminoritycarriersintothespacechargeregion.[8]InDLTSplotstheminoritycarrierspectrausuallyaredepictedwithanoppositesignofamplitudeinrespecttothemajoritycarriertrapspectra.
[edit]LaplaceDLTS
TypicalLaplaceDLTSspectra:
atomofgoldinSiGecrystals
Theuniaxial-stressLaplaceDLTSmeasurements:
interstitialatomofhydrogeninsilicon
ThereisanextensiontoDLTSknownasahighresolutionLaplacetransformDLTS(LDLTS).LaplaceDLTSisanisothermaltechniqueinwhichthecapacitancetransientsaredigitizedandaveragedatafixedtemperature.ThenthedefectemissionratesareobtainedwithauseofnumericalmethodsbeingequivalenttotheinverseLaplacetransformation.Theobtainedemissionratesarepresentedasaspectralplot.[9][10]ThemainadvantageofLaplaceDLTSincomparisontoconventionalDLTSisthesubstantialincreaseinenergyresolutionunderstoodhereasanabilitytodistinguishverysimilarsignals.
LaplaceDLTSincombinationwithuniaxialstressresultsinasplittingofthedefectenergylevel.Assumingarandomdistri
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- 关 键 词:
- DLTS 能级 瞬态