tsmc025和035um设计规则Word格式文档下载.docx
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tsmc025和035um设计规则Word格式文档下载.docx
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SUBM
DEEP
Minimumwidth
12
Minimumspacingbetweenwellsatdifferentpotential
18
Minimumspacingbetweenwellsatsamepotential
6
Minimumspacingbetweenwellsofdifferenttype
0
2.2.2Active[
3
Minimumspacing
Source/drainactivetowelledge
Substrate/wellcontactactivetowelledge
Minimumspacingbetweenactiveofdifferentimplant
4
2.2.3ThickActive[isalayerusedforthoseprocessesofferingtwodifferentthicknessesofgateoxide(typicallyforthelayoutoftransistorsthatoperateattwodifferentvoltagelevels).TheACTIVElayerisusedtodelineatealltheactiveareas,regardlessofgateoxidethickness.THICK_ACTIVEisusedtotomarkthoseACTIVEareasthatwillhavethethickergateoxide;
ACTIVEareasoutsideTHICK_ACTIVEwillhavethethinnergateoxide.
Rule
MinimumACTIVEoverlap
MinimumspacetoexternalACTIVE
MinimumpolywidthinaTHICK_ACTIVEgate
2.2.4Poly[
2
Minimumspacingoverfield
Minimumspacingoveractive
Minimumgateextensionofactive
Minimumactiveextensionofpoly
Minimumfieldpolytoactive
1
2.2.5SilicideBlock[
SBwidth
4
MinimumSBspacing
Minimumspacing,SBtocontact(nocontactsallowedinsideSB)
2
Minimumspacing,SBtoexternalactive
Minimumspacing,SBtoexternalpoly
ResistorispolyinsideSB;
polyendsstickoutforcontacts
theentireresistormustbeoutsidewellandoverfield
N/A
Minimumpolywidthinresistor
5
Minimumspacingofpolyresistors(inasingleSBregion)
7
MinimumSBoverlapofpoly
2.2.6Select[
Minimumselectspacingtochanneloftransistor
Minimumselectoverlapofactive
Minimumselectoverlapofcontact
Minimumselectwidthandspacing(Note:
P-selectandN-selectmaybecoincident,butmustnotoverlap)
2.2.7ElectrodeforCapacitor[poly2layerisasecondpolysiliconlayer(physicallyabovethestandard,orfirst,polylayer).Theoxidebetweenthetwopolysisthecapacitordielectric.Thecapacitorareaistheareaofcoincidentpolyandelectrode.
7
n/a
Minimumpolyoverlap
5
Minimumspacingtoactiveorwelledge(notillustrated)
Minimumspacingtopolycontact
Minimumspacingtounrelatedmetal
2.2.8ElectrodeContact[poly2iscontactedthroughthestandardcontactlayer,similartothefirstpoly.Theoverlapnumbersarelarger,however.
Exactcontactsize
2x2
Minimumcontactspacing
Minimumelectrodeoverlap(oncapacitor)
Minimumelectrodeoverlap(notoncapacitor)
Minimumspacingtopolyoractive
2.2.9ContacttoPoly[
SUBM
DEEP
2x2
Minimumspacingtogateoftransistor
2.2.10ContacttoActive[
Minimumactiveoverlap
2.2.11Metal1[
Minimumoverlapofanycontact
Minimumspacingwhenmetallineiswiderthan10lambda
2.2.12Via[
Exactsize
3x3
Minimumvia1spacing
Minimumoverlapbymetal1
Minimumspacingtocontact
Minimumspacingtopolyoractiveedge
2.2.13Metal2[
Minimumoverlapofvia1
Minimumspacingwhenmetallinewiderthan10lambda
8
2.2.14Via2[
3x3
Minimumoverlapbymetal2
Minimumspacingtovia1
2.2.14Metal3[
Minimumspacingtometal3
Minimumoverlapofvia2
2.2.15Via3[
MinimumoverlapbyMetal3
1
2.2.16Metal4[
METAL4width
METAL4space
METAL4overlapofVIA3
2.2.17CAP_TOP_METAL[CAP_TOP_METALlayerisusedexclusivelyfortheconstructionofmetal-to-metalcapacitors.Thebottomplateofthecapacitorisoneoftheregularmetallayers,asspecifiedbelow.CAP_TOP_METAListheupperplateofthecapacitor;
itissandwichedphysicallybetweenthebottomplatemetalandthenextmetallayerabove,withathindielectricbetweenthebottomandtopplates.
TheCAP_TOP_METALcanonlybecontactedfromthemetalabove;
thebottomplatemetalcanbecontactedfrombeloworabove(subject,ineithercase,torule.CAP_TOP_METALmustalwaysbecontainedentirelywithinthebottomplatemetal.
Process
BottomPlate
TopPlate
TopPlateContact
TSMC_025
METAL4
CAP_TOP_METAL
VIA4andMETAL5
Lambda
MinimumWidth,Capacitor
50
MinimumSpacing(2capacitorssharingasinglebottomplate)
Minimumbottommetaloverlap
Minimumoverlapofvia
Minimumspacingtobottommetalvia
Minimumbottommetaloverlapofitsvia
2.2.18Via4(DEEP)[
Rule
Description
Lambda
Exactsize
3x3
Minimumspacing
3
MinimumoverlapbyMetal4
2.2.19Metal5(DEEP)[
5MetalProcess
Minimumwidth
MinimumspacingtoMetal5
MinimumoverlapofVia4
2.2.20Overglass[thatrulesinthissectionareinunitsofmicrons.Theyarenot"
true"
designrules,buttheydomakegoodpracticerules.Unfortunately,therearenoreallygoodgenericpaddesignrulessincepadsareprocess-specific.
Microns
Minimumbondingpassivationopening
60
Minimumprobepassivationopening
20
Padmetaloverlapofpassivation
Minimumpadspacingtounrelatedmetal
30
Minimumpadspacingtoactive,polyorpoly2
15
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