如何正确读懂英飞凌的IGBT的资料文档格式.docx
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如何正确读懂英飞凌的IGBT的资料文档格式.docx
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•Nominalcurrent(ICnom)
Specifiedasdatacode:
FF450R17ME3
Nomnacurrentsspecfedat80℃,25℃vauesasogvenasreference
Tc=Tjmax
-(Vcesat,max
@Tjmax
*ICnom
*Rthjc)
Forinternaluseonly Page3
Calculatedvaluewillbehigherthandatasheetvalue,allnominalcurrentistakenasinteger
ThisvaluejustrepresentsIGBTDCbehavior,canbeareferenceofchoosingIGBT,butnotyardstick.
•Pulsecurrent(ICRMIRBSOA)
ICRMisdefinedasrepetitiveturnonpulsecurrent
IRBSOAisdefinedasmaximumturnoffcurrent
ICRM
IRBSOA
IC VCE
VGE
Forinternaluseonly Page4
1msisjusttestcondition,realpulsewidthisdependonthermal
•Shortcircuitcurrent(ISC)
VCE
IC
VGE
VCE
Forinternaluseonly Page5
scShortbeforeSwtchOn scShortafterSwtchOn
Theshortcircuitcurrentvalueisatypicalvalue.Inapplications,theshortcircuittimeshouldnotexceed10us.
•Shortcircuitcondition:
¬
VGE:
gatevoltage(15V)
VCC:
DCbusvoltage
Tvj:
shortcircuitstarttemperature
ISC
tSC
Forinternaluseonly Page6
InfineontestshortcircuitatmaximumoperationTj
•Blockingvoltage(VCES)
VCESspecifiedatTj=25℃.HigherTj,higherblockingvoltage
Chiplevel
Modulelevel
Duetostrayinductanceinsidemodule
DV=
di/dt*Ld
RBSOA
VCESiseasiesttobeexceedduringturnoff,duetoexternalandinternalstrayinductance
Forinternaluseonly Page7
VCEScannotbeviolatedatanycondition,otherwiseIGBTwouldbreakthough
•Saturationvoltage(VCEsat)
VCEsatsspecfedatnomna current,bothTj=25℃and125℃aregven
InfineonIGBTareallpositivetemperaturecoefficient
Goodforparalleling
VCEsatvalueistotallyatchiplevel,excludingleadresistance
Page8
Forinternaluseonly Page9
VCEsatincreasewithICincreasing
VCEsatincreasewithVGEdecreasing
VGEisnotrecommendedtousetoosmall,ThisincreasesIGBTbothconductionandswitchinglosses
VCEsatvalueisusedtocalculateconductionlosses
=VT0+RCE
*IC
C
R =DVCE
=VCE
(2)
-VCE
(1)
ΔIC
CE DI
IC
(2)
-IC
(1)
RCE
ΔVCE
VT0
Basicdataforconductionlossescalculation
Tangentpointshouldsetclosetooperatingpoint
ForSPWMcontrol,theconductionlossesis:
2
P =1(V
*IP+R
*IP
)+m*cosj
*(V
*IP+
1 *R
*I 2)
cond,IGBT
2 T0 p
CE 4
T0 8 3p
CE P
m:
modulationfact;
IP:
outputpeakcurrent;
cosφ:
powerfactor
Page10
•Internalgateresistor(RGint)
Torealizemoduleinternalchipcurrentsharing,moduleintegrateinternalgateresistor.Thisvalueshouldbeconsideredasonepartoftotalgateresistortocalculatepeakcurrentcapabilityofadriver
Page11
•Externalgateresistor(RGext)
Externalgateresistoriswhatusercanset,thisvalueinfluenceIGBTswitchingperformance
TheminimumrecommendedRgextisshownintheswitchingtestcondition
UsercangetdifferentRGonandRGoffbyadecouplingdiode
RGon
=R1
//R2,RGoff
=R2
Forinternaluseonly Page12
Thisisjustanexample.Therearealotofcircuittorealizeit
MinimumRGonislimitedbyturnondi/dt,minimumRGoffislimitedbyturnoffdv/dt.ToosmallRGcauseoscillationandmaydestroyIGBTanddiode
•Externalgatecapacitor(CGE)
HighvoltagemoduleisrecommendedtousedexternalCGEtocontrolgateturnonspeed.
WithexternalCGE,turnondi/dtanddv/dtcanbedecoupled.Thishelptorealizelowturnonlosseswithlimitedturnondi/dt
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