微机原理课件ch10英文PPT文件格式下载.ppt
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微机原理课件ch10英文PPT文件格式下载.ppt
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Chapter10MemoryInterface,Instructor:
@#@Dr.AlexYu,Contents,MemoryDevicesAddressDecoding8086MemoryInterfaceKeynotes:
@#@AddressDecoding,2022/10/10,第2页,MemoryDevices,TypeROM:
@#@Read-onlymemoryRAM:
@#@Read-WritememoryFourcommonlyusedmemoriesROMFlash,EEPROMStaticRAM(SRAM)DynamicRAM(DRAM),SDRAM,RAMBUS,DDRRAMGenericpinconfiguration,2022/10/10,第3页,MemoryChip,AddressPinsThenumberofaddresspinsisrelatedtothenumberofmemorylocations1Mfor20pinsDataPinsThedatapinsaretypicallybi-directionalinread-writememories.Thenumberofdatapinsisrelatedtothesizeofthememorylocation.Forexample,an8-bitwide(byte-wide)memorydevicehas8datapins.Cataloglistingof1KX8indicateabyteaddressable8Kbitmemorywith10addresspins.ControlPins#CSor#S:
@#@ChipSelect,enableread/writeoperations#OEor#G:
@#@OutputEnable,enables/disablesasetoftri-statebuffers#WE:
@#@writeenableSomechips,R/#W,2022/10/10,第4页,ROM,Non-volatilememory:
@#@Maintainsitsstatewhenpowereddown.Thereareseveralforms:
@#@ROM:
@#@Factoryprogrammed,cannotbechanged.Olderstyle.PROM:
@#@ProgrammableRead-OnlyMemory.Fieldprogrammablebutonlyonce.Olderstyle.EPROM:
@#@ErasableProgrammableRead-OnlyMemory.Reprogrammingrequiresupto20minutesofhigh-intensityUVlightexposure.Flash,EEPROM:
@#@ElectricallyErasableProgrammableROM.AlsocalledEAROM(ElectricallyAlterableROM)andNOVRAM(NOn-VolatileRAM).WritingismuchslowerthananormalRAM.Usedtostoresetupinformation,e.g.videocard,oncomputersystems.CanbeusedtoreplaceEPROMforBIOSmemory.,2022/10/10,第5页,ROM,AddressBusDataBusControlBusChipEnable:
@#@#CEOutputEnable:
@#@#OE,2022/10/10,第6页,ReadOperation,2022/10/10,第7页,StandardEPROMICs,2022/10/10,第8页,Intel2716EPROM,2022/10/10,第9页,Intel2716EPROM,2022/10/10,第10页,RAM,2022/10/10,第11页,RAM,DRAMvsSRAMSRAMsarelimitedinsize.DRAMsareavailableinmuchlargersizes,e.g.,64M1.DRAMsMUSTberefreshed(rewritten)every2to4msSincetheystoretheirvalueonanintegratedcapacitorthatloseschargeovertime.ThisrefreshisperformedbyaspecialcircuitintheDRAMwhichrefreshestheentirememory.Refreshalsooccursonanormalreadorwrite.ThelargestoragecapacityofDRAMsmakeitimpracticaltoaddtherequirednumberofaddresspins.Instead,theaddresspinsaremultiplexed.,2022/10/10,第12页,RAM,2022/10/10,第13页,TI4016SRAM,2022/10/10,第14页,DRAM,TheTMS4464canstoreatotalof256Kbitsofdata.Ithas64Kaddressablelocationswhichmeansitneeds16addressinputs,butithasonly8.Therowaddress(A0throughA7)areplacedontheaddresspinsandstrobedintoasetofinternallatches.Thecolumnaddress(A8throughA15)isthenstrobedinusingCAS.,2022/10/10,第15页,DRAMTiming,2022/10/10,第16页,AddressDecoding,Theprocessorcanusuallyaddressamemoryspacethatismuchlargerthanthememoryspacecoveredbyanindividualmemorychip.Inordertospliceamemorydeviceintotheaddressspaceoftheprocessor,decodingisnecessary.Forexample,the8088issues20-bitaddressesforatotalof1MBofmemoryaddressspace.However,theBIOSona2716EPROMhasonly2KBofmemoryand11addresspins.Adecodercanbeusedtodecodetheadditional9addresspinsandallowtheEPROMtobeplacedinany2KBsectionofthe1MBaddressspace.,2022/10/10,第17页,AddressDecoding,2022/10/10,第18页,Todeterminetheaddressrangethatadeviceismappedinto:
@#@This2KBmemorysegmentmapsintotheresetlocationofthe8086/8088(FFFF0H).NANDgatedecodersarenotoftenusedLargefan-inNANDgatesarenotefficientMultipleNANDgateICsmightberequiredtoperformsuchdecodingRatherthe3-to-8LineDecoder(74LS138)ismorecommon.,AddressDecoding,2022/10/10,第19页,3-8LineDecoder74LS138,NotethatallthreeEnables(G2A,G2B,andG1)mustbeactive,e.g.low,lowandhigh,respectively.Eachoutputofthedecodercanbeattachedtoan2764EPROM(8K8).,2022/10/10,第20页,Decodingwith74LS138,2022/10/10,第21页,8088/80188(8-bit)MemoryInterface,Thememorysystemsseesthe8088asadevicewith:
@#@20addressconnections(A19toA0).8databusconnections(AD7toAD0).3controlsignals,IO/M,RD,andWR.Welllookatinterfacingthe8088with:
@#@32KofEPROM(ataddressesF8000HthroughFFFFFH).512KofSRAM(ataddresses00000Hthrough7FFFFH).TheEPROMinterfaceusesa74LS138(3-to-8linedecoder)plus82732(4K8)EPROMs.,2022/10/10,第22页,8088/80188(8-bit)MemoryInterface,2022/10/10,第23页,8088/80188(8-bit)MemoryInterface,2022/10/10,第24页,8086-80386SX16-bitMemoryInterface,2022/10/10,第25页,8086-80386SX16-bitMemoryInterface,2022/10/10,第26页,8086-80386SX16-bitMemoryInterface,2022/10/10,第27页,MemoryInterface,2022/10/10,第28页,HardwareOrganizationoftheMemoryAddressSpace,2022/10/10,第29页,DataTransfer,8088,2022/10/10,第30页,DataTransfer,8086,2022/10/10,第31页,DataTransfer,8086,2022/10/10,第32页,DataTransfer,8086,2022/10/10,第33页,DataTransfer,8086,2022/10/10,第34页,MemoryArchitecture,2022/10/10,第35页,MemoryArchitecture,2022/10/10,第36页,MemoryArchitecture,2022/10/10,第37页,MemoryArchitec
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